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VBsemi Elec STD2N62K3-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | STD2N62K3-VB |
| LCSC Part # | C47993923 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 4.5A TO-252 |
| Datasheet | VBsemi Elec STD2N62K3-VB |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Output Capacitance(Coss) | 177pF | |
| Ciss-Input Capacitance | 1.417nF | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Output Capacitance(Coss) | 177pF | |
| Ciss-Input Capacitance | 1.417nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Low gate charge Qg, simple drive requirements
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Fully characterized capacitance, avalanche voltage, and current
- RoHS compliant with Directive 2002/95/EC
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Output Capacitance(Coss) | 177pF | |
| Ciss-Input Capacitance | 1.417nF | |
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4.5A | |
| Output Capacitance(Coss) | 177pF | |
| Ciss-Input Capacitance | 1.417nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 60W | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 2.1Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 48nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Low gate charge Qg, simple drive requirements
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Fully characterized capacitance, avalanche voltage, and current
- RoHS compliant with Directive 2002/95/EC
C47993923 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |