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VBsemi Elec HT8KE5TB1-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | HT8KE5TB1-VB |
| LCSC Part # | C47993835 |
| Packaging | DFN3x3-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 12.1A DFN3x3-8 |
| Datasheet | VBsemi Elec HT8KE5TB1-VB |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN3x3-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 12.1A | |
| Output Capacitance(Coss) | 7pF | |
| Ciss-Input Capacitance | 250pF | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss) | 5.2pF | |
| RDS(on) | 86mΩ@6V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN3x3-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 12.1A | |
| Output Capacitance(Coss) | 7pF | |
| Ciss-Input Capacitance | 250pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss) | 5.2pF | |
| RDS(on) | 86mΩ@6V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Trench power MOSFET
- 100% Rg and UIS tested
Applications
AI Translation
- DC/DC conversion
- Primary-side switching
- Synchronous rectification
- Industrial applications
- 48V battery monitoring
- LED driver
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN3x3-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 12.1A | |
| Output Capacitance(Coss) | 7pF | |
| Ciss-Input Capacitance | 250pF | |
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss) | 5.2pF | |
| RDS(on) | 86mΩ@6V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN3x3-8 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 12.1A | |
| Output Capacitance(Coss) | 7pF | |
| Ciss-Input Capacitance | 250pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 2.5W | |
| Reverse Transfer Capacitance (Crss) | 5.2pF | |
| RDS(on) | 86mΩ@6V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Trench power MOSFET
- 100% Rg and UIS tested
Applications
AI Translation
- DC/DC conversion
- Primary-side switching
- Synchronous rectification
- Industrial applications
- 48V battery monitoring
- LED driver
C47993835 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |