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VBsemi Elec IPG20N10S4L-22-VB
| Manufacturer | VBsemi ElecAsian Brands |
| MPN | IPG20N10S4L-22-VB |
| LCSC Part # | C47993810 |
| Packaging | DFN5x6-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 36A DFN5x6-8 |
| Datasheet | VBsemi Elec IPG20N10S4L-22-VB |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 36A | |
| Ciss-Input Capacitance | 3.9nF | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 225pF | |
| RDS(on) | 22mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 89nC | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 36A | |
| Ciss-Input Capacitance | 3.9nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 225pF | |
| RDS(on) | 22mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 89nC | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
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Features
AI Translation
- Junction temperature 175 °C
- Trench technology power MOSFET
- RoHS compliant
- N-channel MOSFET
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 36A | |
| Ciss-Input Capacitance | 3.9nF | |
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 225pF | |
| RDS(on) | 22mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 89nC | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | VBsemi Elec | |
| Packaging | DFN5x6-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 470pF | |
| Current - Continuous Drain(Id) | 36A | |
| Ciss-Input Capacitance | 3.9nF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 136W | |
| Reverse Transfer Capacitance (Crss) | 225pF | |
| RDS(on) | 22mΩ@4.5V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 89nC | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Junction temperature 175 °C
- Trench technology power MOSFET
- RoHS compliant
- N-channel MOSFET
C47993810 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |