HXY MOSFET SBC856ALT1G-HXY
| Manufacturer | HXY MOSFETAsian Brands |
| MPN | SBC856ALT1G-HXY |
| LCSC Part # | C47506884 |
| Packaging | SOT-23 |
| Customer # | |
| Key Attributes | TRANS 65V 0.1A SOT-23 |
| Datasheet | HXY MOSFET SBC856ALT1G-HXY |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 65V | |
| DC Current Gain | 250 | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 100mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | Standalone | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 65V | |
| DC Current Gain | 250 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 100mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | Standalone | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
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Features
AI Translation
- Collector Current: IC =-0.1A
- Power Dissipation of 200mW
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 65V | |
| DC Current Gain | 250 | |
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 100mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | Standalone | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | HXY MOSFET | |
| Packaging | SOT-23 | |
| Operating Temperature | - | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 100MHz | |
| Collector - Emitter Voltage VCEO | 65V | |
| DC Current Gain | 250 |
| Type | Description | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| Current - Collector(Ic) | 100mA | |
| Pd - Power Dissipation | 200mW | |
| Configuration | Standalone | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Collector Current: IC =-0.1A
- Power Dissipation of 200mW
C47506884 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



