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ST STPSC6H065DRoHS

Manufacturer
ST
MPN
STPSC6H065D
LCSC Part #
C472624
Packaging
TO-220AC
Customer #
Key Attributes
650 V, 6 A high surge silicon carbide power Schottky diode
Datasheetpdf iconST STPSC6H065D
In-Stock: 187
187 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 1.7058$ 1.71
10+$ 1.4619$ 14.62
50+$ 1.3074$ 65.37
100+$ 1.1513$ 115.13
500+$ 1.0798$ 539.90
1,000+$ 1.0489$ 1048.90
Standard Packaging50/Full Tube
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
ManufacturerST
PackagingTO-220AC
Diode Configuration1 Independent
Operating Junction Temperature Range-40℃~+175℃
Voltage - DC Reverse (Vr) (Max)650V
Voltage - Forward(Vf@If)1.75V@6A
Reverse Leakage Current (Ir)60uA@650V
Non-Repetitive Peak Forward Surge Current60A
Current - Rectified6A
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging50
Sales UnitPiece

Introduction

AI Translation

This 6 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

This STPSC6H065 is especially suited for use in PFC applications. This ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

Features

AI Translation
  • No reverse recovery charge in application current range
  • Switching behavior independent of temperature
  • High forward surge capability
  • Insulated package TO-220AC Ins: Insulated voltage: 2500 VRMS Typical package capacitance: 7 pF
  • Power efficient product

Applications

AI Translation
  • Switch mode power supply
  • PFC
  • DCDC converters
  • LLC topologies
  • Boost diode