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ST STB34N65M5
| Manufacturer | |
| MPN | STB34N65M5 |
| LCSC Part # | C472575 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 190W 650V 28A 110mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS |
| Datasheet | ST STB34N65M5 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 75pF | |
| Ciss-Input Capacitance | 2.7nF | |
| Pd - Power Dissipation | 190W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 28A | |
| Reverse Transfer Capacitance (Crss) | 6.3pF | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 62.5nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 75pF | |
| Ciss-Input Capacitance | 2.7nF | |
| Pd - Power Dissipation | 190W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 650V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 28A | |
| Reverse Transfer Capacitance (Crss) | 6.3pF | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 62.5nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Introduction
These devices are N-channel MDmesh V power MOSFETs based on an innovative proprietary vertical process technology combined with the well-known PowerMESH™ lateral layout structure. The resulting products feature extremely low on-resistance, unmatched among silicon-based power MOSFETs, making them particularly well-suited for applications requiring superior power density and outstanding efficiency.
Features
- Industry-leading RDS(on) × die area product
- Higher VDSS ratings and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
Applications
- Switching applications
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 75pF | |
| Ciss-Input Capacitance | 2.7nF | |
| Pd - Power Dissipation | 190W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 28A | |
| Reverse Transfer Capacitance (Crss) | 6.3pF | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 62.5nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 75pF | |
| Ciss-Input Capacitance | 2.7nF | |
| Pd - Power Dissipation | 190W | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 650V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 28A | |
| Reverse Transfer Capacitance (Crss) | 6.3pF | |
| RDS(on) | 110mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 62.5nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Type | N-Channel |
Introduction
These devices are N-channel MDmesh V power MOSFETs based on an innovative proprietary vertical process technology combined with the well-known PowerMESH™ lateral layout structure. The resulting products feature extremely low on-resistance, unmatched among silicon-based power MOSFETs, making them particularly well-suited for applications requiring superior power density and outstanding efficiency.
Features
- Industry-leading RDS(on) × die area product
- Higher VDSS ratings and high dv/dt capability
- Excellent switching performance
- 100% avalanche tested
Applications
- Switching applications
C472575 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |