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ST STB40NF10LT4
| Manufacturer | |
| MPN | STB40NF10LT4 |
| LCSC Part # | C472534 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 40A D2PAK |
| Datasheet | ST STB40NF10LT4 |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 290pF | |
| Ciss-Input Capacitance | 2.3nF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 40A | |
| Reverse Transfer Capacitance (Crss) | 125pF | |
| RDS(on) | 33mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 64nC@80V | |
| Vgs | ±15V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 290pF | |
| Ciss-Input Capacitance | 2.3nF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 40A | |
| Reverse Transfer Capacitance (Crss) | 125pF | |
| RDS(on) | 33mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 64nC@80V | |
| Vgs | ±15V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This Power MOSFET series realized with unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high - efficiency isolated DC - DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Features
AI Translation
- Exceptional dv/dt capability
- 100% avalanche tested
- Application oriented characterization
Applications
AI Translation
- Switching application
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 63
63 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 2.4175 | $ 2.42 |
| 10+ | $ 2.1754 | $ 21.75 |
| 30+ | $ 2.0422 | $ 61.27 |
| 100+ | $ 1.8911 | $ 189.11 |
| 500+ | $ 1.8245 | $ 912.25 |
| 1,000+ | $ 1.7953 | $ 1795.30 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 290pF | |
| Ciss-Input Capacitance | 2.3nF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 40A | |
| Reverse Transfer Capacitance (Crss) | 125pF | |
| RDS(on) | 33mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 64nC@80V | |
| Vgs | ±15V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 290pF | |
| Ciss-Input Capacitance | 2.3nF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -40℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 40A | |
| Reverse Transfer Capacitance (Crss) | 125pF | |
| RDS(on) | 33mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 64nC@80V | |
| Vgs | ±15V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This Power MOSFET series realized with unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high - efficiency isolated DC - DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.
Features
AI Translation
- Exceptional dv/dt capability
- 100% avalanche tested
- Application oriented characterization
Applications
AI Translation
- Switching application
C472534 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| SUM23N15-73-GE3-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 40 | $1.5223 $1.7909 | ||
| FDB2552-NL-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 3 | $1.5548 $1.8291 | ||
| SQM40N15-38-GE3-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 1 | $1.5548 $1.8291 | ||
| HM50N15D-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 10 | $1.5548 $1.8291 | ||
| PSMN035-150B-VB | VBsemi Elec | Similar | TO-263(D2PAK) | 48 | $1.6938 $1.9926 |