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YONGYUTAI SS510
| Manufacturer | YONGYUTAIAsian Brands |
| MPN | SS510 |
| LCSC Part # | C47147615 |
| Packaging | SMA |
| Customer # | |
| Key Attributes | DIODE SCHOTTKY 100V SMA |
| Datasheet | YONGYUTAI SS510 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | YONGYUTAI | |
| Packaging | SMA | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 850mV@5A | |
| Reverse Leakage Current (Ir) | 500uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 100A | |
| Current - Rectified | 5A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | YONGYUTAI | |
| Packaging | SMA | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 850mV@5A | |
| Reverse Leakage Current (Ir) | 500uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 100A | |
| Current - Rectified | 5A |
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Features
AI Translation
- Metal-silicon junction, majority carrier conduction
- Surface mount application
- Low power consumption, high efficiency
- High forward surge current capability
- Suitable for low-voltage high-frequency inverters, freewheeling, and polarity protection applications
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | YONGYUTAI | |
| Packaging | SMA | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 850mV@5A | |
| Reverse Leakage Current (Ir) | 500uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 100A | |
| Current - Rectified | 5A |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Manufacturer | YONGYUTAI | |
| Packaging | SMA | |
| Diode Configuration | 1 Independent | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 850mV@5A | |
| Reverse Leakage Current (Ir) | 500uA@100V | |
| Non-Repetitive Peak Forward Surge Current | 100A | |
| Current - Rectified | 5A |
Help & FeedbackShow similar products (0) >
Features
AI Translation
- Metal-silicon junction, majority carrier conduction
- Surface mount application
- Low power consumption, high efficiency
- High forward surge current capability
- Suitable for low-voltage high-frequency inverters, freewheeling, and polarity protection applications
C47147615 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Type | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |