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AGMSEMI AGM3P06E
| Manufacturer | AGMSEMIAsian Brands |
| MPN | AGM3P06E |
| LCSC Part # | C46610132 |
| Packaging | SOT-23-3 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 2.5A SOT-23-3 |
| Datasheet | AGMSEMI AGM3P06E |
| Alternative Parts | 3 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | SOT-23-3 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.5A | |
| Output Capacitance(Coss) | 58pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 1.25W | |
| RDS(on) | 110mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 315pF | |
| Gate Charge(Qg) | 6nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | SOT-23-3 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.5A | |
| Output Capacitance(Coss) | 58pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.25W | |
| RDS(on) | 110mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 315pF | |
| Gate Charge(Qg) | 6nC@10V | |
| Type | P-Channel |
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Introduction
AI Translation
AGM3P06E combines advanced trench MOSFET technology with a low-resistance package to achieve ultra-low RDS(ON). This device is ideally suited for load switching and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low R\textDS(ON) for minimized conduction losses
- Low gate charge for fast switching
- Low thermal resistance
Applications
AI Translation
- MB/VGA Vcore
- Synchronous rectifier for switching power supply secondary side
- Point-of-load applications
- Brushless DC motor driver
In-Stock: 10
10 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.0961 | $ 0.48 |
| 50+ | $ 0.0767 | $ 3.84 |
| 150+ | $ 0.0669 | $ 10.04 |
| 500+ | $ 0.0596 | $ 29.80 |
| 3,000+ | $ 0.0538 | $ 161.40 |
| 6,000+ | $ 0.0508 | $ 304.80 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | SOT-23-3 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.5A | |
| Output Capacitance(Coss) | 58pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 1.25W | |
| RDS(on) | 110mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 315pF | |
| Gate Charge(Qg) | 6nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | SOT-23-3 | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2.5A | |
| Output Capacitance(Coss) | 58pF | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.25W | |
| RDS(on) | 110mΩ@4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 3pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 315pF | |
| Gate Charge(Qg) | 6nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
AGM3P06E combines advanced trench MOSFET technology with a low-resistance package to achieve ultra-low RDS(ON). This device is ideally suited for load switching and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low R\textDS(ON) for minimized conduction losses
- Low gate charge for fast switching
- Low thermal resistance
Applications
AI Translation
- MB/VGA Vcore
- Synchronous rectifier for switching power supply secondary side
- Point-of-load applications
- Brushless DC motor driver
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |