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AGMSEMI AGM1095MA
| Manufacturer | AGMSEMIAsian Brands |
| MPN | AGM1095MA |
| LCSC Part # | C46610122 |
| Packaging | PDFN5x6-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 100V 13A PDFN5x6-8 |
| Datasheet | AGMSEMI AGM1095MA |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | PDFN5x6-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 86pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 33.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 33nC@10V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | PDFN5x6-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 86pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 33.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 33nC@10V | |
| Type | N-Channel + P-Channel |
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Introduction
AI Translation
AGM1095MA combines advanced trench MOSFET technology with a low-resistance package to achieve ultra-low RDS(ON). This device is ideal for load switching and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low RDS(ON) for minimized conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- Secondary-side synchronous rectifier for switching power supplies
- Point-of-load applications
- Brushless DC motor driver
In-Stock: 10
10 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2686 | $ 1.34 |
| 50+ | $ 0.213 | $ 10.65 |
| 150+ | $ 0.1891 | $ 28.37 |
| 500+ | $ 0.1593 | $ 79.65 |
| 3,000+ | $ 0.1461 | $ 438.30 |
| 6,000+ | $ 0.1381 | $ 828.60 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | PDFN5x6-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 86pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Pd - Power Dissipation | 33.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 33nC@10V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AGMSEMI | |
| Packaging | PDFN5x6-8 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 86pF | |
| Current - Continuous Drain(Id) | 13A | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 33.7W | |
| Reverse Transfer Capacitance (Crss@Vds) | 40pF | |
| RDS(on) | 200mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.62nF | |
| Gate Charge(Qg) | 33nC@10V | |
| Type | N-Channel + P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
AGM1095MA combines advanced trench MOSFET technology with a low-resistance package to achieve ultra-low RDS(ON). This device is ideal for load switching and battery protection applications.
Features
AI Translation
- Advanced high cell density trench technology
- Low RDS(ON) for minimized conduction losses
- Low gate charge for fast switching
- Low thermal resistance
- 100% avalanche tested
- 100% DVDS tested
Applications
AI Translation
- MB/VGA Vcore
- Secondary-side synchronous rectifier for switching power supplies
- Point-of-load applications
- Brushless DC motor driver
C46610122 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| AGM1030MA | AGMSEMI | PDFN-8(5x6) | 2,805 | $ 0.3056 |