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onsemi FDMC86139P

Manufacturer
MPN
FDMC86139P
LCSC Part #
C463243
Packaging
WDFN-8(3.3x3.3)
Customer #
Key Attributes
MOSFET P-CH 100V 15A WDFN-8(3.3x3.3)
Datasheetonsemi FDMC86139P
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
Manufactureronsemi
PackagingWDFN-8(3.3x3.3)
Output Capacitance(Coss)178pF
Ciss-Input Capacitance1.335nF
Pd - Power Dissipation40W
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage100V
Current - Continuous Drain(Id)15A
Reverse Transfer Capacitance (Crss)15pF
RDS(on)67mΩ@10V
Number1 P-Channel
Gate Charge(Qg)22nC@10V
Vgs±25V
Gate Threshold Voltage (Vgs(th))2V
TypeP-Channel

Introduction

AI Translation

This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.

Features

AI Translation
  • Max rDS(on)=67 mΩ at VGS=-10 Vz , ID=-4.4 A
  • Max rDS(on)=89 mΩ at VGS=-6 V, ID=-3.6 A
  • Very Low RDS−On Mid Voltage P Channel Silicon Technology Optimised for Low Qg
  • This Product is Optimised for Fast Switching Applications as well as Load Switch Applications
  • 100% UIL Tested
  • These Devices are Pb−Free and are RoHS Compliant

Applications

AI Translation
  • Active Clamp Switch
  • Load Switch