onsemi FDMC86139P
| Manufacturer | |
| MPN | FDMC86139P |
| LCSC Part # | C463243 |
| Packaging | WDFN-8(3.3x3.3) |
| Customer # | |
| Key Attributes | MOSFET P-CH 100V 15A WDFN-8(3.3x3.3) |
| Datasheet | onsemi FDMC86139P |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 178pF | |
| Ciss-Input Capacitance | 1.335nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 15A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 22nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 178pF | |
| Ciss-Input Capacitance | 1.335nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 15A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 22nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.
Features
AI Translation
- Max rDS(on)=67 mΩ at VGS=-10 Vz , ID=-4.4 A
- Max rDS(on)=89 mΩ at VGS=-6 V, ID=-3.6 A
- Very Low RDS−On Mid Voltage P Channel Silicon Technology Optimised for Low Qg
- This Product is Optimised for Fast Switching Applications as well as Load Switch Applications
- 100% UIL Tested
- These Devices are Pb−Free and are RoHS Compliant
Applications
AI Translation
- Active Clamp Switch
- Load Switch
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 178pF | |
| Ciss-Input Capacitance | 1.335nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 15A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 22nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | WDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 178pF | |
| Ciss-Input Capacitance | 1.335nF | |
| Pd - Power Dissipation | 40W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 15A | |
| Reverse Transfer Capacitance (Crss) | 15pF | |
| RDS(on) | 67mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 22nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance.
Features
AI Translation
- Max rDS(on)=67 mΩ at VGS=-10 Vz , ID=-4.4 A
- Max rDS(on)=89 mΩ at VGS=-6 V, ID=-3.6 A
- Very Low RDS−On Mid Voltage P Channel Silicon Technology Optimised for Low Qg
- This Product is Optimised for Fast Switching Applications as well as Load Switch Applications
- 100% UIL Tested
- These Devices are Pb−Free and are RoHS Compliant
Applications
AI Translation
- Active Clamp Switch
- Load Switch
C463243 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



