DIODES DMN2025UFDB-7
| Manufacturer | |
| MPN | DMN2025UFDB-7 |
| LCSC Part # | C460998 |
| Packaging | UDFN2020-6 |
| Customer # | |
| Key Attributes | MOSFET N-CH ARR 20V 6A UDFN2020-6 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | UDFN2020-6 | |
| Current - Continuous Drain(Id) | 6A | |
| RDS(on) | 25mΩ@4.5V | |
| Pd - Power Dissipation | 1.4W | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 92pF | |
| Gate Charge(Qg) | 12.3nC@10V | |
| Operating Temperature | -55℃~+150℃ |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- 0.6mm Profile – Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low Gate Threshold Voltage
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Battery Management Application
- Power Management Functions
- DC-DC Converters
In-Stock: 225
225 In stock, ships now
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2096 | $ 1.05 |
| 50+ | $ 0.1635 | $ 8.18 |
| 150+ | $ 0.1437 | $ 21.56 |
| 500+ | $ 0.1191 | $ 59.55 |
| 3,000+ | $ 0.1081 | $ 324.30 |
| 6,000+ | $ 0.1015 | $ 609.00 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Manufacturer | DIODES | |
| Packaging | UDFN2020-6 | |
| Current - Continuous Drain(Id) | 6A | |
| RDS(on) | 25mΩ@4.5V | |
| Pd - Power Dissipation | 1.4W | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Drain to Source Voltage | 20V | |
| Reverse Transfer Capacitance (Crss@Vds) | 77pF | |
| Number | 2 N-Channel | |
| Input Capacitance(Ciss) | 92pF | |
| Gate Charge(Qg) | 12.3nC@10V | |
| Operating Temperature | -55℃~+150℃ |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 5 |
| Multiple | 5 |
| Standard Packaging | 3000 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features
AI Translation
- 0.6mm Profile – Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low Gate Threshold Voltage
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Applications
AI Translation
- Battery Management Application
- Power Management Functions
- DC-DC Converters
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



