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DIODES DMN2011UFDE-7

Manufacturer
DIODES
MPN
DMN2011UFDE-7
LCSC Part #
C460996
Packaging
UDFN2020-6
Customer #
Key Attributes
MOSFET N-CH 20V 11.7A UDFN2020-6
DatasheetDIODES DMN2011UFDE-7
RoHS Compliance5 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerDIODES
PackagingUDFN2020-6
Output Capacitance(Coss)295pF
Ciss-Input Capacitance3.372nF
Pd - Power Dissipation610mW
Configuration-
Operating Temperature-55℃~+150℃
Drain to Source Voltage20V
Current - Continuous Drain(Id)11.7A
Reverse Transfer Capacitance (Crss)398pF
RDS(on)9.5mΩ@4.5V
Number1 N-channel
Gate Charge(Qg)36nC
Vgs±12V
Gate Threshold Voltage (Vgs(th))1V
TypeN-Channel
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Introduction

AI Translation

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

AI Translation
  • 0.6mm Profile – Ideal for Low Profile Applications
  • PCB Footprint of 4mm²
  • Low Gate Threshold Voltage
  • Low On-Resistance
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony Free. “Green” Device
  • Qualified to AEC-Q101 Standards for High Reliability

Applications

AI Translation
  • General Purpose Interfacing
  • Switch Power Management Functions