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EDA ModelsEasyEDA
ST STB120NF10T4
| Manufacturer | |
| MPN | STB120NF10T4 |
| LCSC Part # | C457510 |
| Packaging | D2PAK |
| Customer # | |
| Key Attributes | 312W 100V 110A 10.5mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS |
| Datasheet | ST STB120NF10T4 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 785pF | |
| Ciss-Input Capacitance | 5.2nF | |
| Pd - Power Dissipation | 312W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 110A | |
| Reverse Transfer Capacitance (Crss) | 325pF | |
| RDS(on) | 10.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 233nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 785pF | |
| Ciss-Input Capacitance | 5.2nF | |
| Pd - Power Dissipation | 312W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 110A | |
| Reverse Transfer Capacitance (Crss) | 325pF | |
| RDS(on) | 10.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 233nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These Power MOSFETs have been developed using the unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Features
AI Translation
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
Applications
AI Translation
- Switching applications
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 1.9574 | $ 1.96 |
| 10+ | $ 1.9145 | $ 19.15 |
| 30+ | $ 1.887 | $ 56.61 |
| 100+ | $ 1.8594 | $ 185.94 |
Standard Packaging1000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 785pF | |
| Ciss-Input Capacitance | 5.2nF | |
| Pd - Power Dissipation | 312W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 110A | |
| Reverse Transfer Capacitance (Crss) | 325pF | |
| RDS(on) | 10.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 233nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | D2PAK | |
| Output Capacitance(Coss) | 785pF | |
| Ciss-Input Capacitance | 5.2nF | |
| Pd - Power Dissipation | 312W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 110A | |
| Reverse Transfer Capacitance (Crss) | 325pF | |
| RDS(on) | 10.5mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 233nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These Power MOSFETs have been developed using the unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Features
AI Translation
- Exceptional dv/dt capability
- 100% avalanche tested
- Low gate charge
Applications
AI Translation
- Switching applications
C457510 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Alternative Type | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|---|
| MSA004B | MIRACLE POWER | Similar | TO-263 | 800 | $0.6070 $0.6389 | ||
| KNB2910A | KIA Semicon Tech | Similar | TO-263-2 | 601 | $ 0.9553 | ||
| NCEP026N10D | NCE | Similar | TO-263 | 42 | $ 2.3379 | ||
| NCEP15T14D | NCE | Similar | TO-263-2L | 481 | $ 2.6791 | ||
| IPB107N20N3G(TOKMAS) | Tokmas | Similar | TO-263 | 122 | $ 1.3801 |