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VBsemi Elec IPD50N06S4L12ATMA2-VB product image
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VBsemi Elec IPD50N06S4L12ATMA2-VB

Manufacturer
VBsemi ElecAsian Brands
MPN
IPD50N06S4L12ATMA2-VB
LCSC Part #
C45662394
Packaging
TO-252
Customer #
Key Attributes
MOSFET N-CH 60V 58A TO-252
DatasheetVBsemi Elec IPD50N06S4L12ATMA2-VB
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.869$ 0.7387$ 0.74
10+$ 0.7437$ 0.6322$ 6.32
30+$ 0.6818$ 0.5796$ 17.39
100+$ 0.62$ 0.5270$ 52.70
500+$ 0.4817$ 0.4095$ 204.75
1,000+$ 0.4638$ 0.3943$ 394.30
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVBsemi Elec
PackagingTO-252
Drain to Source Voltage60V
Operating Temperature-55℃~+175℃
Current - Continuous Drain(Id)58A
Output Capacitance(Coss)470pF
Ciss-Input Capacitance2.65nF
Pd - Power Dissipation136W
Reverse Transfer Capacitance (Crss)225pF
RDS(on)10mΩ@10V
Number1 N-channel
Gate Charge(Qg)70nC@10V
Gate Threshold Voltage (Vgs(th))3V
TypeN-Channel

Introduction

AI Translation

The YFW50P03DF employs advanced trench technology to deliver excellent RDS(on), low gate charge, and operation down to 4.5V gate voltage. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Junction temperature 175 °C
  • Trench FET power MOSFET
  • N-channel MOSFET

Applications

AI Translation
  • Battery protection
  • Load switch
  • Uninterruptible power supply

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