MACOM MA4P404-30
| Hersteller | |
| Herst.-Teilenr. | MA4P404-30 |
| LCSC-Nr. | C4468257 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | Standalone 250V RF Diodes |
| Datenblatt | MACOM MA4P404-30 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/RF Diodes | |
| Hersteller | MACOM | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | - | |
| Diode Configuration | Standalone | |
| Reverse Leakage Current (Ir) | 10uA@250V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - Forward(Vf@If) | - | |
| Voltage - DC Reverse(Vr) | 250V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/RF Diodes | |
| Hersteller | MACOM | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | - |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | Standalone | |
| Reverse Leakage Current (Ir) | 10uA@250V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - Forward(Vf@If) | - | |
| Voltage - DC Reverse(Vr) | 250V |
Beschreibung
MACOM's packaged PIN diode product line is extensive, covering a comprehensive range of electrical characteristics and package styles. This combination of semiconductor technology and package diversity gives circuit designers tremendous flexibility. The fast-switching series of packaged PIN diodes uses thin I-region, silicon oxide or glass passivated dies to achieve low leakage current and low insertion loss.
By using process control monitors to regulate wafer fabrication parameters, these devices deliver consistent performance in control circuit applications. The high-voltage packaged PIN diode product line employs MACOM CERMACHIP passivation technology, offering hard glass encapsulation that provides hermetic sealing and protection of the die's active regions.
These packaged CERMACHIP PIN diodes are ideal for high-power applications where high-level RF voltages are present. The diode dies are housed in hermetically sealed ceramic packages designed for the most demanding electrical and environmental conditions. Multiple package styles are available for use in a wide variety of RF microwave circuits.
The packaged PIN diode series is designed for high inherent reliability and can be screened to meet numerous MIL-STD requirements upon request.
Coaxial Packages Leaded/Surface Mount Packages Stud Mount Packages Maximum Power Dissipation
Merkmale
- High power
- Fast speed
- Voltage ratings up to 1500V
- Wide selection of carrier lifetimes
- Wide selection of capacitance
- Multiple package styles
- Screenable for military applications
- RoHS compliant
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 21.0614 | $ 21.06 |
| 200+ | $ 8.1506 | $ 1630.12 |
| 500+ | $ 7.8649 | $ 3932.45 |
| 1,000+ | $ 7.7236 | $ 7723.60 |
Standardgehäuse50/Full Tray | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/RF Diodes | |
| Hersteller | MACOM | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | - | |
| Diode Configuration | Standalone | |
| Reverse Leakage Current (Ir) | 10uA@250V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - Forward(Vf@If) | - | |
| Voltage - DC Reverse(Vr) | 250V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/RF Diodes | |
| Hersteller | MACOM | |
| Verp. | - | |
| Non-Repetitive Peak Forward Surge Current | - | |
| Current - Rectified | - |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | Standalone | |
| Reverse Leakage Current (Ir) | 10uA@250V | |
| Operating Junction Temperature Range | -65℃~+175℃ | |
| Voltage - Forward(Vf@If) | - | |
| Voltage - DC Reverse(Vr) | 250V |
Beschreibung
MACOM's packaged PIN diode product line is extensive, covering a comprehensive range of electrical characteristics and package styles. This combination of semiconductor technology and package diversity gives circuit designers tremendous flexibility. The fast-switching series of packaged PIN diodes uses thin I-region, silicon oxide or glass passivated dies to achieve low leakage current and low insertion loss.
By using process control monitors to regulate wafer fabrication parameters, these devices deliver consistent performance in control circuit applications. The high-voltage packaged PIN diode product line employs MACOM CERMACHIP passivation technology, offering hard glass encapsulation that provides hermetic sealing and protection of the die's active regions.
These packaged CERMACHIP PIN diodes are ideal for high-power applications where high-level RF voltages are present. The diode dies are housed in hermetically sealed ceramic packages designed for the most demanding electrical and environmental conditions. Multiple package styles are available for use in a wide variety of RF microwave circuits.
The packaged PIN diode series is designed for high inherent reliability and can be screened to meet numerous MIL-STD requirements upon request.
Coaxial Packages Leaded/Surface Mount Packages Stud Mount Packages Maximum Power Dissipation
Merkmale
- High power
- Fast speed
- Voltage ratings up to 1500V
- Wide selection of carrier lifetimes
- Wide selection of capacitance
- Multiple package styles
- Screenable for military applications
- RoHS compliant
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |