MACOM MADP-017015-13140P

This device is a silicon-on-glass PIN diode chip manufactured using MACOM's proprietary HMC process. The device features two silicon pedestals embedded in low-loss, low-dispersion glass. The diode is formed on top of one of the pedestals, with connection to the back of the device achieved by making the pedestal sidewalls conductive. A surface mount device is fabricated using a selective backside metallization process. This vertical topology enables excellent thermal transfer. The top of the device is fully encapsulated with silicon nitride, with an additional polymer layer for scratch and impact protection. These protective coatings prevent damage to the junction and anode air bridge during handling and assembly.

• 0603 package
• SMT
• 15μm intrinsic region length device
• Wire bond-free
• Silicon nitride passivation
• Polymer scratch protection
• Low parasitic capacitance and inductance
• High average and peak power handling capability

These unpackaged devices are suitable for applications with moderate incident power (≤50 dBm/CW), or peak power ≤75 dBm with pulse width ≤1μs and duty cycle ≤0.01%. Compared to their plastic-packaged counterparts, their low parasitic inductance of 0.4 nH and excellent RC constant make them a superior choice for high-frequency switching components.