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DIODES ZXMN3A04DN8TA

Manufacturer
MPN
ZXMN3A04DN8TA
LCSC Part #
C445021
Packaging
SO-8
Customer #
Key Attributes
30V 8.5A 20mΩ@10V 1.25W 1V 2 N-Channel SO-8 FET, MOSFET Arrays RoHS
DatasheetDIODES ZXMN3A04DN8TA
RoHS Compliance3 documents available
Alternative Parts10
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QtyUnit Price(Reference Only)Total Amount
1+$ 1.1638$ 1.16
10+$ 1.1408$ 11.41
30+$ 1.1239$ 33.72
100+$ 1.1085$ 110.85
Standard Packaging500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
ManufacturerDIODES
PackagingSO-8
Drain to Source Voltage30V
Current - Continuous Drain(Id)8.5A
RDS(on)20mΩ@10V
Pd - Power Dissipation1.25W
Gate Threshold Voltage (Vgs(th))1V
ConfigurationCommon source
Reverse Transfer Capacitance (Crss@Vds)218pF
Number2 N-Channel
Input Capacitance(Ciss)1.89nF
Gate Charge(Qg)36.8nC@10V
Operating Temperature-55℃~+150℃

Introduction

AI Translation

The next-generation trench MOSFET features a unique structure that combines low on-resistance with fast switching speed, making it an ideal choice for efficient, low-voltage power management applications.

Features

AI Translation
  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • Thin SOIC package

Applications

AI Translation
  • DC-DC Converter
  • Power Management
  • Disconnect Switch
  • Motor Control

Alternative Parts

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TPSI4816BDY-T1-GE3TECH PUBLICSOP-81,995$0.6577 $0.7307
NCE30ND09SNCESOP-825$ 0.2871
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