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Infineon IMT65R040M2HXUMA1
| Manufacturer | |
| MPN | IMT65R040M2HXUMA1 |
| LCSC Part # | C42670745 |
| Packaging | HSOF-8 |
| Customer # | |
| Key Attributes | 650V 58.7A 5.6V 277W 49mΩ 1 N-channel N-Channel HSOF-8 Single FETs, MOSFETs RoHS |
| Datasheet | Infineon IMT65R040M2HXUMA1 |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | HSOF-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Half-Bridge | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 96pF | |
| Current - Continuous Drain(Id) | 58.7A | |
| Gate Threshold Voltage (Vgs(th)) | 5.6V | |
| Pd - Power Dissipation | 277W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF | |
| RDS(on) | 49mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 997pF | |
| Gate Charge(Qg) | 28nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | HSOF-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Half-Bridge | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 96pF | |
| Current - Continuous Drain(Id) | 58.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5.6V | |
| Pd - Power Dissipation | 277W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF | |
| RDS(on) | 49mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 997pF | |
| Gate Charge(Qg) | 28nC | |
| Type | N-Channel |
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Introduction
AI Translation
Based on Infineon's robust 2nd generation silicon carbide trench technology, the 650V CoolSiC MOSFET delivers unmatched performance, superior reliability, and excellent ease of use. It enables cost-effective, high-efficiency, and simplified designs to meet the ever-growing demands of systems and markets.
Features
AI Translation
- Ultra-low switching losses
- Nominal gate threshold voltage, V_GS(th) = 4.5V
- Robust immunity to parasitic turn-on even at 0V turn-off gate voltage
- Flexible drive voltage, compatible with bipolar gate drive schemes
- Robust body diode operation under hard commutation events
- .XT interconnect technology for best-in-class thermal performance
Applications
AI Translation
- SMPS
- Solar PV inverters
- UPS
- EV charging infrastructure
- Motor drives
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 8.885 | $ 8.89 |
| 10+ | $ 7.5955 | $ 75.96 |
| 30+ | $ 6.8101 | $ 204.30 |
| 100+ | $ 6.1515 | $ 615.15 |
Standard Packaging2000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | HSOF-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Half-Bridge | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 96pF | |
| Current - Continuous Drain(Id) | 58.7A | |
| Gate Threshold Voltage (Vgs(th)) | 5.6V | |
| Pd - Power Dissipation | 277W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF | |
| RDS(on) | 49mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 997pF | |
| Gate Charge(Qg) | 28nC | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | HSOF-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | Half-Bridge | |
| Drain to Source Voltage | 650V | |
| Output Capacitance(Coss) | 96pF | |
| Current - Continuous Drain(Id) | 58.7A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5.6V | |
| Pd - Power Dissipation | 277W | |
| Reverse Transfer Capacitance (Crss@Vds) | 5.8pF | |
| RDS(on) | 49mΩ | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 997pF | |
| Gate Charge(Qg) | 28nC | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Based on Infineon's robust 2nd generation silicon carbide trench technology, the 650V CoolSiC MOSFET delivers unmatched performance, superior reliability, and excellent ease of use. It enables cost-effective, high-efficiency, and simplified designs to meet the ever-growing demands of systems and markets.
Features
AI Translation
- Ultra-low switching losses
- Nominal gate threshold voltage, V_GS(th) = 4.5V
- Robust immunity to parasitic turn-on even at 0V turn-off gate voltage
- Flexible drive voltage, compatible with bipolar gate drive schemes
- Robust body diode operation under hard commutation events
- .XT interconnect technology for best-in-class thermal performance
Applications
AI Translation
- SMPS
- Solar PV inverters
- UPS
- EV charging infrastructure
- Motor drives
C42670745 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC | |
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | |
| USHTS | |
| TARIC |
| Type | Details |
|---|---|
| CAHTS | |
| BRHTS | |
| INHTS | |
| MXHTS | |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IMT65R033M2HXUMA1 | Infineon | HSOF-8 | 30 | $ 12.4441 | ||
| IMT65R026M2HXUMA1 | Infineon | HSOF-8 | 20 | $ 11.7917 | ||
| IMT65R039M1HXUMA1 | Infineon | HSOF-8-1 | 0 | $ 10.2714 | ||
| IMT65R030M1HXUMA1 | Infineon | HSOF-8-1 | 0 | $ 7.2012 | ||
| IMT65R020M2HXUMA1 | Infineon | HSOF-8 | 0 | $ 16.2885 |