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Hangzhou Silan Microelectronics SVF4N65CAMJ
| Manufacturer | Hangzhou Silan MicroelectronicsAsian Brands |
| MPN | SVF4N65CAMJ |
| LCSC Part # | C42459726 |
| Packaging | TO-251J-3L |
| Customer # | |
| Key Attributes | MOSFET N-CH 650V 4A TO-251J-3L |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Hangzhou Silan Microelectronics | |
| Packaging | TO-251J-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 430pF | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss) | 4.1pF | |
| RDS(on) | 2.7Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Hangzhou Silan Microelectronics | |
| Packaging | TO-251J-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 430pF | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss) | 4.1pF | |
| RDS(on) | 2.7Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Hangzhou Silan Microelectronics | |
| Packaging | TO-251J-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 430pF | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss) | 4.1pF | |
| RDS(on) | 2.7Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Hangzhou Silan Microelectronics | |
| Packaging | TO-251J-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A |
| Type | Description | |
|---|---|---|
| Ciss-Input Capacitance | 430pF | |
| Pd - Power Dissipation | 79W | |
| Reverse Transfer Capacitance (Crss) | 4.1pF | |
| RDS(on) | 2.7Ω@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
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Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |