XNRUSEMI XR50G30F
| Manufacturer | XNRUSEMIAsian Brands |
| MPN | XR50G30F |
| LCSC Part # | C42457193 |
| Packaging | PDFN5060-8L |
| Customer # | |
| Key Attributes | MOSFET N-CH+P-CH ARR 30V 45A PDFN5060-8L |
| Datasheet | XNRUSEMI XR50G30F |
| RoHS Compliance | 2 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | PDFN5060-8L | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 163pF;233pF | |
| Current - Continuous Drain(Id) | 45A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 15W;21.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 131pF;206pF | |
| RDS(on) | 7.5mΩ@10V;8.7mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF;1.77nF | |
| Gate Charge(Qg) | 12.8nC@4.5V;22nC@10V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | PDFN5060-8L | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 163pF;233pF | |
| Current - Continuous Drain(Id) | 45A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 15W;21.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 131pF;206pF | |
| RDS(on) | 7.5mΩ@10V;8.7mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF;1.77nF | |
| Gate Charge(Qg) | 12.8nC@4.5V;22nC@10V | |
| Type | N-Channel + P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
XR 50G30F is a high-performance complementary N-channel and P-channel MOSFET featuring high cell density, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR 50G30F is RoHS compliant and meets green product requirements, with 100% EAS-guaranteed and full functional reliability qualification.
Features
AI Translation
- 100% EAS guaranteed
- Green/eco-friendly devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Applications
AI Translation
- Power management in half-bridge and inverter applications - DC-DC converters - Load switches
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1795 | $ 0.90 |
| 50+ | $ 0.1578 | $ 7.89 |
| 150+ | $ 0.1485 | $ 22.28 |
| 500+ | $ 0.1369 | $ 68.45 |
| 2,500+ | $ 0.1317 | $ 329.25 |
| 5,000+ | $ 0.1286 | $ 643.00 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | PDFN5060-8L | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 163pF;233pF | |
| Current - Continuous Drain(Id) | 45A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Pd - Power Dissipation | 15W;21.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 131pF;206pF | |
| RDS(on) | 7.5mΩ@10V;8.7mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF;1.77nF | |
| Gate Charge(Qg) | 12.8nC@4.5V;22nC@10V | |
| Type | N-Channel + P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | PDFN5060-8L | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 163pF;233pF | |
| Current - Continuous Drain(Id) | 45A | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 15W;21.3W | |
| Reverse Transfer Capacitance (Crss@Vds) | 131pF;206pF | |
| RDS(on) | 7.5mΩ@10V;8.7mΩ@10V | |
| Number | 1 N-Channel + 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF;1.77nF | |
| Gate Charge(Qg) | 12.8nC@4.5V;22nC@10V | |
| Type | N-Channel + P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
XR 50G30F is a high-performance complementary N-channel and P-channel MOSFET featuring high cell density, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge for most synchronous buck converter applications. XR 50G30F is RoHS compliant and meets green product requirements, with 100% EAS-guaranteed and full functional reliability qualification.
Features
AI Translation
- 100% EAS guaranteed
- Green/eco-friendly devices available
- Ultra-low gate charge
- Excellent CdV/dt immunity
- Advanced high cell density trench technology
Applications
AI Translation
- Power management in half-bridge and inverter applications - DC-DC converters - Load switches
C42457193 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



