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XNRUSEMI XRS12N10
| Fabricante | XNRUSEMIAsian Brands |
| N.º de pieza fab. | XRS12N10 |
| Nº LCSC | C42457075 |
| Emb. | TO-252-3L |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 100V 12A TO-252-3L |
| Hoja de Datos | XNRUSEMI XRS12N10 |
| Cumplimiento RoHS | 2 documentos disponibles |
| Piezas alternativas | 10 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | XNRUSEMI | |
| Emb. | TO-252-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 17W | |
| RDS(on) | 95mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 200pF | |
| Gate Charge(Qg) | 18nC@50V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | XNRUSEMI | |
| Emb. | TO-252-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 17W | |
| RDS(on) | 95mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 200pF | |
| Gate Charge(Qg) | 18nC@50V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
The XRS75N10F utilizes super trench technology and design to deliver excellent on-resistance RDS(ON) with low gate charge. It is suitable for a wide range of applications. Available in a PDFN5060-8L package, it is compliant with RoHS and halogen-free standards.
Características
Traducción por IA
- Split-gate trench MOSFET technology
- Excellent thermal dissipation package
- High-density cell design for low on-resistance RDS(ON)
Aplicaciones
Traducción por IA
- DC-DC converter
- Power management function
- Synchronous rectification application
En stock: 2,435
2,435 En stock, envío inmediato
Mínimo: 5Múltiplo: 5Unidad de venta: Piece
Añadir a la Lista BOM
| Cant. | Prec. unit. | Importo total |
|---|---|---|
| 5+ | $ 0.0931$ 0.0885 | $ 0.44 |
| 50+ | $ 0.0742$ 0.0705 | $ 3.53 |
| 150+ | $ 0.0648$ 0.0616 | $ 9.24 |
| 500+ | $ 0.0577$ 0.0549 | $ 27.45 |
| 2,500+ | $ 0.0521$ 0.0495 | $ 123.75 |
| 5,000+ | $ 0.0492$ 0.0468 | $ 234.00 |
Encapsulado Estándar2500/Full Reel | ||
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | XNRUSEMI | |
| Emb. | TO-252-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 17W | |
| RDS(on) | 95mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 200pF | |
| Gate Charge(Qg) | 18nC@50V |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | XNRUSEMI | |
| Emb. | TO-252-3L | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 17W | |
| RDS(on) | 95mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 200pF | |
| Gate Charge(Qg) | 18nC@50V |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
The XRS75N10F utilizes super trench technology and design to deliver excellent on-resistance RDS(ON) with low gate charge. It is suitable for a wide range of applications. Available in a PDFN5060-8L package, it is compliant with RoHS and halogen-free standards.
Características
Traducción por IA
- Split-gate trench MOSFET technology
- Excellent thermal dissipation package
- High-density cell design for low on-resistance RDS(ON)
Aplicaciones
Traducción por IA
- DC-DC converter
- Power management function
- Synchronous rectification application
C42457075 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Piezas alternativas
| MPN | Fabricante | Empaque | Disponibilidad | Precio unitario | ||
|---|---|---|---|---|---|---|
| XR30N10B | XNRUSEMI | TO-252-3L | 1,855 | $0.1179 $0.1241 | ||
| XR40N10 | XNRUSEMI | TO-252-3L | 865 | $0.1667 $0.1754 | ||
| XRS12N12 | XNRUSEMI | TO-252-3L | 480 | $0.0956 $0.1006 | ||
| XR15N10 | XNRUSEMI | TO-252-3L | 1,845 | $0.0809 $0.0851 | ||
| XR20N10 | XNRUSEMI | TO-252-3L | 2,485 | $0.0996 $0.1048 | ||
| XR50N10L | XNRUSEMI | TO-252-3L | 1,625 | $0.2103 $0.2213 | ||
| XR60N10L | XNRUSEMI | TO-252-3L | 1,470 | $0.2462 $0.2591 | ||
| XRS15N10 | XNRUSEMI | TO-252-3L | 360 | $0.0956 $0.1006 | ||
| XR35N10 | XNRUSEMI | TO-252-3L | 660 | $0.1516 $0.1595 | ||
| XRS55N10 | XNRUSEMI | TO252-3L | 2,085 | $0.1838 $0.1934 |