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XNRUSEMI XR2317L
| Manufacturer | XNRUSEMIAsian Brands |
| MPN | XR2317L |
| LCSC Part # | C42456896 |
| Packaging | SOT-23-3L |
| Customer # | |
| Key Attributes | MOSFET P-CH 20V 9A SOT-23-3L |
| Datasheet | XNRUSEMI XR2317L |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | SOT-23-3L | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 26mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 168pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 33.7nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | SOT-23-3L | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 26mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 168pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 33.7nC@4.5V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
XR2317L is a high cell density trench P-channel MOSFET, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. XR2317L complies with RoHS standards and green product requirements, and has passed full-function reliability qualification.
Features
AI Translation
- RoHS-compliant green device
- Ultra-low gate charge
- Excellent Cdv/dt immunity
- Advanced high cell density trench technology
In-Stock: 1,220
1,220 In stock, ships now
Minimum: 10Multiple: 10Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 10+ | $ 0.0464$ 0.0441 | $ 0.44 |
| 100+ | $ 0.037$ 0.0352 | $ 3.52 |
| 300+ | $ 0.0323$ 0.0307 | $ 9.21 |
| 3,000+ | $ 0.0287$ 0.0273 | $ 81.90 |
| 6,000+ | $ 0.0259$ 0.0247 | $ 148.20 |
| 9,000+ | $ 0.0245$ 0.0233 | $ 209.70 |
Standard Packaging3000/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | SOT-23-3L | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 26mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 168pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 33.7nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | XNRUSEMI | |
| Packaging | SOT-23-3L | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 9A | |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 26mΩ@2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 168pF | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.2nF | |
| Gate Charge(Qg) | 33.7nC@4.5V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
XR2317L is a high cell density trench P-channel MOSFET, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and efficiency for most low-power switching and load switch applications. XR2317L complies with RoHS standards and green product requirements, and has passed full-function reliability qualification.
Features
AI Translation
- RoHS-compliant green device
- Ultra-low gate charge
- Excellent Cdv/dt immunity
- Advanced high cell density trench technology
C42456896 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |