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XNRUSEMI XR20N03D

Manufacturer
XNRUSEMIAsian Brands
MPN
XR20N03D
LCSC Part #
C42456729
Packaging
PDFN-8L(3.3x3.3)
Customer #
Key Attributes
MOSFET N-CH 30V 20A PDFN-8L(3.3x3.3)
DatasheetXNRUSEMI XR20N03D
RoHS Compliance2 documents available
Alternative Parts5
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerXNRUSEMI
PackagingPDFN-8L(3.3x3.3)
Drain to Source Voltage30V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)79pF
Current - Continuous Drain(Id)20A
Ciss-Input Capacitance490pF
Pd - Power Dissipation5.5W
Reverse Transfer Capacitance (Crss)61pF
RDS(on)15mΩ@10V
Number1 N-channel
Gate Charge(Qg)10nC@15V
Gate Threshold Voltage (Vgs(th))1.5V
TypeN-Channel
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Introduction

AI Translation

XR20N03D is a high cell density trench N-channel MOSFET, delivering excellent on-resistance (R<sub>DS(ON)</sub>) and gate charge performance for most synchronous buck converter applications. XR20N03D is RoHS compliant and meets green product requirements, 100% tested for avalanche energy capability (EAS), with full functional reliability qualification.

Features

AI Translation
  • Ultra-low gate charge
  • 100% avalanche energy (EAS) guaranteed
  • RoHS-compliant green devices available
  • Excellent dv/dt immunity
  • Advanced high cell density trench technology