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onsemi NCP81253MNTBG

Manufacturer
onsemi
MPN
NCP81253MNTBG
LCSC Part #
C424480
Packaging
DFN-8-EP(2x2)
Customer #
Key Attributes
4.5V~5.5V 800mA DFN-8-EP(2x2) Gate Drivers RoHS
Datasheetonsemi NCP81253MNTBG
RoHS Compliance4 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Gate Drivers
Manufactureronsemi
PackagingDFN-8-EP(2x2)
Input Logic Level - Low700mV
Low Level Delay Time-
High Level Delay Time-
Quiescent Current-
Input Logic Level - High3.4V
Voltage - Supply4.5V~5.5V
Operating Temperature-40℃~+100℃
Driven ConfigurationHalf-Bridge
Current - Output Low(IOL)800mA
Rise Time16ns
Fall Time11ns
FeaturesEnable shutdown;Dead-time control;Interleaved conduction protection;Built-in bootstrap diode
Current - Output High(IOH)-
Load TypeMOSFET
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Introduction

AI Translation

The NCP81253 is a high performance dual MOSFET gate driver in a small 2 mm x 2 mm package, optimized to drive the gates of both high−side and low−side power MOSFETs in a synchronous buck converter. The driver outputs can be placed into a high−impedance state via the tri−state PWM and EN inputs. The NCP81253 comes packaged with an integrated boost diode to minimize external components. A VCC UVLO function guarantees the outputs are low when the supply voltage is low.

Features

AI Translation
  • Space−efficient 2 mm x 2 mm DFN8 Thermally−enhanced Package
  • VCC Range of 4.5 V to 5.5 V
  • Internal Bootstrap Diode
  • 5 V 3−stage PWM Input
  • Diode Braking Capability via EN Mid−state
  • Adaptive Anti−cross Conduction Circuit Protects against Cross−conduction during FET Turn−on and Turn−off
  • Output Disable Control Turns Off both MOSFETs via Enable Pin
  • VCC Undervoltage Lockout
  • These devices are Pb. −free, Halogen−free/BFR−free and are RoHS compliant

Applications

AI Translation
  • Power Solutions for Notebook and Desktop Systems