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TDSEMIC 10N65-TD

Manufacturer
TDSEMICAsian Brands
MPN
10N65-TD
LCSC Part #
C42422143
Packaging
TO-220
Customer #
Key Attributes
MOSFET N-CH 650V 10A TO-220
DatasheetTDSEMIC 10N65-TD
RoHS Compliance1 documents available
Alternative Parts1
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTDSEMIC
PackagingTO-220
Drain to Source Voltage650V
Output Capacitance(Coss)144pF
Current - Continuous Drain(Id)10A
Ciss-Input Capacitance1.622nF
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss)7pF
RDS(on)810mΩ@10V
Number1 N-channel
Gate Charge(Qg)34.2nC@10V
Gate Threshold Voltage (Vgs(th))4V
TypeN-Channel
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Introduction

AI Translation

The AO4435-TD utilizes advanced trench technology to deliver excellent RDS(ON), low gate charge, and operation at gate voltages as low as 2.5V. This device is suitable for battery protection or other switching applications.

Features

AI Translation
  • Low gate charge
  • Low capacitance, fast switching
  • Halogen-free, RoHS compliant
  • 100% tested for single-pulse avalanche energy capability (UIS)

Applications

AI Translation
  • High-frequency switch-mode power supplies
  • Motor drivers
  • LED power supplies