TWGMC TW30P04CC
| Manufacturer | TWGMCAsian Brands |
| MPN | TW30P04CC |
| LCSC Part # | C42417386 |
| Packaging | PDFN3x3-8 |
| Customer # | |
| Key Attributes | MOSFET P-CH 40V 30A PDFN3x3-8 |
| Datasheet | TWGMC TW30P04CC |
| RoHS Compliance | 1 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TWGMC | |
| Packaging | PDFN3x3-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 282pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 21W | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 20mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.05nF | |
| Gate Charge(Qg) | 28nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TWGMC | |
| Packaging | PDFN3x3-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 282pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 21W | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 20mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.05nF | |
| Gate Charge(Qg) | 28nC@4.5V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These N-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency fast-switching applications.
Features
AI Translation
- The TW30P04CC is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
- The TW30P04CC meet the RoHS and Green Product requirement with full function reliability approved.
Applications
AI Translation
- Notebook computers - Load switches - LED applications - Handheld devices
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In-Stock: 1,980
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Minimum: 5Multiple: 5Sales Unit: Piece
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| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.1824 | $ 0.91 |
| 50+ | $ 0.1471 | $ 7.36 |
| 150+ | $ 0.1319 | $ 19.79 |
| 500+ | $ 0.113 | $ 56.50 |
| 2,500+ | $ 0.0914 | $ 228.50 |
| 5,000+ | $ 0.0864 | $ 432.00 |
Standard Packaging5000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TWGMC | |
| Packaging | PDFN3x3-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 282pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 21W | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 20mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.05nF | |
| Gate Charge(Qg) | 28nC@4.5V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | TWGMC | |
| Packaging | PDFN3x3-8 | |
| Drain to Source Voltage | 40V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 282pF | |
| Current - Continuous Drain(Id) | 30A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 21W | |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF | |
| RDS(on) | 20mΩ@4.5V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 3.05nF | |
| Gate Charge(Qg) | 28nC@4.5V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These N-channel enhancement-mode power MOSFETs are fabricated using trench DMOS technology. This advanced technology is specifically designed to minimize on-resistance, deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are ideally suited for high-efficiency fast-switching applications.
Features
AI Translation
- The TW30P04CC is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
- The TW30P04CC meet the RoHS and Green Product requirement with full function reliability approved.
Applications
AI Translation
- Notebook computers - Load switches - LED applications - Handheld devices
C42417386 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



