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DOINGTER DOD10P10
| Manufacturer | DOINGTERAsian Brands |
| MPN | DOD10P10 |
| LCSC Part # | C42412121 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET P-CH 100V 10A TO-252 |
| Datasheet | DOINGTER DOD10P10 |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 33.7pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 28.1pF | |
| RDS(on) | 260mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.198nF | |
| Gate Charge(Qg) | 19.5nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 33.7pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 28.1pF | |
| RDS(on) | 260mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.198nF | |
| Gate Charge(Qg) | 19.5nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -100 V, ID = -10 A, RDS(ON) < 300 mΩ @ VGS = -10 V
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package with superior thermal dissipation.
In-Stock: 335
335 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.119 | $ 0.60 |
| 50+ | $ 0.0976 | $ 4.88 |
| 150+ | $ 0.0869 | $ 13.04 |
| 500+ | $ 0.0789 | $ 39.45 |
| 2,500+ | $ 0.0724 | $ 181.00 |
| 5,000+ | $ 0.0692 | $ 346.00 |
Standard Packaging2500/Full Reel | ||
Better price for more quantity?
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 33.7pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 28.1pF | |
| RDS(on) | 260mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.198nF | |
| Gate Charge(Qg) | 19.5nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DOINGTER | |
| Packaging | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 33.7pF | |
| Current - Continuous Drain(Id) | 10A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 40W | |
| Reverse Transfer Capacitance (Crss@Vds) | 28.1pF | |
| RDS(on) | 260mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 1.198nF | |
| Gate Charge(Qg) | 19.5nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This P-channel MOSFET utilizes advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. It is suitable for a wide range of applications.
Features
AI Translation
- VDS = -100 V, ID = -10 A, RDS(ON) < 300 mΩ @ VGS = -10 V
- Low gate charge.
- RoHS-compliant devices available.
- Advanced high cell density trench technology for ultra-low RDS(ON).
- Excellent package with superior thermal dissipation.
C42412121 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| DH300PG-B | DOINGTER | TO-252 | 15 | $ 0.1108 | ||
| RD3P130SPTL1-DO | DOINGTER | TO-252 | 2,495 | $ 0.1531 | ||
| IRFR5410-DO | DOINGTER | TO-252 | 2,335 | $ 0.1462 | ||
| SUD09P10-195-GE3-DO | DOINGTER | TO-252 | 90 | $ 0.1338 | ||
| DH200PG | DOINGTER | TO-252 | 415 | $ 0.1454 | ||
| DOD12P10 | DOINGTER | TO-252 | 120 | $0.1278 $0.1389 | ||
| DH170PG-C | DOINGTER | TO-252 | 2,500 | $ 0.1727 | ||
| DOD40P10 | DOINGTER | TO-252 | 250 | $ 0.3317 | ||
| DOD20P10 | DOINGTER | TO-252 | 1,435 | $ 0.2444 | ||
| DOD20P10-A | DOINGTER | TO-252 | 740 | $0.2587 $0.2811 |