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OSEN OSD80P06T
| Manufacturer | OSENAsian Brands |
| MPN | OSD80P06T |
| LCSC Part # | C42381465 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET P-CH 60V 80A TO-252 |
| Datasheet | OSEN OSD80P06T |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | OSEN | |
| Packaging | TO-252 | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 550pF | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 7.88nF | |
| Gate Charge(Qg) | 129nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | OSEN | |
| Packaging | TO-252 | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 550pF | |
| Current - Continuous Drain(Id) | 80A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 7.88nF | |
| Gate Charge(Qg) | 129nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. Suitable for DC-DC conversion, power switching, and charging circuits. Standard products are lead-free.
Features
AI Translation
- Fast switching speed - High input impedance and low-level drive - Avalanche energy tested - Improved dv/dt capability, high durability
Applications
AI Translation
- High-efficiency switching power supplies
- Power factor correction
- Electronic ballasts
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
In-Stock: 520
520 In stock, ships now
Minimum: 5Multiple: 5Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 5+ | $ 0.2629 | $ 1.31 |
| 50+ | $ 0.2095 | $ 10.48 |
| 150+ | $ 0.1866 | $ 27.99 |
| 500+ | $ 0.1581 | $ 79.05 |
| 2,500+ | $ 0.1454 | $ 363.50 |
| 5,000+ | $ 0.1377 | $ 688.50 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | OSEN | |
| Packaging | TO-252 | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 550pF | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 7.88nF | |
| Gate Charge(Qg) | 129nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | OSEN | |
| Packaging | TO-252 | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 550pF | |
| Current - Continuous Drain(Id) | 80A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.1V | |
| Pd - Power Dissipation | 120W | |
| Reverse Transfer Capacitance (Crss@Vds) | 450pF | |
| RDS(on) | 20mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 7.88nF | |
| Gate Charge(Qg) | 129nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
P-channel enhancement-mode MOSFET. Utilizing advanced trench technology and design to deliver excellent RDS(ON) with low gate charge. Suitable for DC-DC conversion, power switching, and charging circuits. Standard products are lead-free.
Features
AI Translation
- Fast switching speed - High input impedance and low-level drive - Avalanche energy tested - Improved dv/dt capability, high durability
Applications
AI Translation
- High-efficiency switching power supplies
- Power factor correction
- Electronic ballasts
C42381465 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| OSD80P06 | OSEN | TO-252 | 45 | $ 0.2669 |