JSMSEMI MJD41CRLG
| Manufacturer | JSMSEMIAsian Brands |
| MPN | MJD41CRLG |
| LCSC Part # | C41421811 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | TRANS NPN 100V 6A TO-252 |
| Datasheet | JSMSEMI MJD41CRLG |
| RoHS Compliance | 5 documents available |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+150℃ | |
| Transition frequency(fT) | 3MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 15 | |
| Current - Collector(Ic) | 6A | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+150℃ | |
| Transition frequency(fT) | 3MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 5V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 15 | |
| Current - Collector(Ic) | 6A | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
- Collector-Emitter Breakdown Voltage -V(BR)CEo = 100V(Min)
- Collector-Emitter Saturation Voltage -VCE(sat) := 1.5V(Max) × IC = 6A
- Complement to Type MJD42C
Applications
AI Translation
- Designed for low power audio amplifier and low-current, high-speed switching applications
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+150℃ | |
| Transition frequency(fT) | 3MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 15 | |
| Current - Collector(Ic) | 6A | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.5V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Manufacturer | JSMSEMI | |
| Packaging | TO-252 | |
| Current - Collector Cutoff | 10uA | |
| Operating Temperature | -65℃~+150℃ | |
| Transition frequency(fT) | 3MHz | |
| Collector - Emitter Voltage VCEO | 100V | |
| Emitter-Base Voltage VEBO | 5V |
| Type | Description | |
|---|---|---|
| DC Current Gain | 15 | |
| Current - Collector(Ic) | 6A | |
| Pd - Power Dissipation | 20W | |
| Configuration | - | |
| Number | 1 NPN | |
| type | NPN | |
| Vce Saturation(VCE(sat)) | 1.5V |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
- Collector-Emitter Breakdown Voltage -V(BR)CEo = 100V(Min)
- Collector-Emitter Saturation Voltage -VCE(sat) := 1.5V(Max) × IC = 6A
- Complement to Type MJD42C
Applications
AI Translation
- Designed for low power audio amplifier and low-current, high-speed switching applications
C41421811 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Type | Details |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |



