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JSCJ 2N7002T
| Manufacturer | JSCJAsian Brands |
| MPN | 2N7002T |
| LCSC Part # | C40106 |
| Packaging | SOT-523 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 115mA SOT-523 |
| Datasheet | JSCJ 2N7002T |
| Alternative Parts | 1 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSCJ | |
| Packaging | SOT-523 | |
| Output Capacitance(Coss) | 25pF | |
| Pd - Power Dissipation | 150mW | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 115mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSCJ | |
| Packaging | SOT-523 | |
| Output Capacitance(Coss) | 25pF | |
| Pd - Power Dissipation | 150mW | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 115mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel enhancement-mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specifically designed to minimize on-resistance while providing superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
AI Translation
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
Applications
AI Translation
- Load Switch for Portable Devices
- DC/DC Converter
In-Stock: 30,480
30,480 In stock, ships now
Minimum: 20Multiple: 20Sales Unit: Piece
Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 20+ | $ 0.0332 | $ 0.66 |
| 200+ | $ 0.0267 | $ 5.34 |
| 600+ | $ 0.0232 | $ 13.92 |
| 3,000+ | $ 0.0186 | $ 55.80 |
| 9,000+ | $ 0.0167 | $ 150.30 |
| 21,000+ | $ 0.0157 | $ 329.70 |
Standard Packaging3000/Full Reel | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSCJ | |
| Packaging | SOT-523 | |
| Output Capacitance(Coss) | 25pF | |
| Pd - Power Dissipation | 150mW | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 115mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | JSCJ | |
| Packaging | SOT-523 | |
| Output Capacitance(Coss) | 25pF | |
| Pd - Power Dissipation | 150mW | |
| Operating Temperature | - | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 115mA |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| RDS(on) | 5Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 50pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This N-channel enhancement-mode power MOSFET is fabricated using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specifically designed to minimize on-resistance while providing superior switching performance and high avalanche energy ruggedness. These devices are suitable for switch-mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
AI Translation
- High density cell design for low RDS(ON)
- Voltage controlled small signal switch
- Rugged and reliable
- High saturation current capability
Applications
AI Translation
- Load Switch for Portable Devices
- DC/DC Converter
C40106 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| 2N7002T-HAF | JSCJ | SOT-523 | 1,000 | $ 0.0358 |