Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 565pF | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 348mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 565pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 348mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The 10N15 is the highest performance trench Nc-h MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The 10N15 meet the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Super Low Gate Charge
- Green Device Available
- Excellent Cdv/dt effect decline
- Advanced high cell density Trench technology
Applications
AI Translation
- Power switch circuits for adapters and chargers
- Synchronous rectification in DC/DC and AC/DC converters
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 565pF | |
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 348mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | HL | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 150V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 565pF |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 1.5W | |
| RDS(on) | 348mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
The 10N15 is the highest performance trench Nc-h MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The 10N15 meet the RoHS and Green Product requirement with full function reliability approved.
Features
AI Translation
- Super Low Gate Charge
- Green Device Available
- Excellent Cdv/dt effect decline
- Advanced high cell density Trench technology
Applications
AI Translation
- Power switch circuits for adapters and chargers
- Synchronous rectification in DC/DC and AC/DC converters
C39673595 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



