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GigaDevice Semicon Beijing GD25Q40CTIGR product image
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GigaDevice Semicon Beijing GD25Q40CTIGR

Manufacturer
MPN
GD25Q40CTIGR
LCSC Part #
C395468
Packaging
SOP-8
Customer #
Key Attributes
4Mbit 2.7V~3.6V 120MHz SPI SOP-8 Memory RoHS
DatasheetGigaDevice Semicon Beijing GD25Q40CTIGR
RoHS Compliance1 documents available
Alternative Parts3
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Memory/Memory
ManufacturerGigaDevice Semicon Beijing
PackagingSOP-8
Operating Temperature-40℃~+85℃
FeaturesWrite enable latch;Hardware Write Protection;Software Write Protection;Absolute Write Protection
Memory Size4Mbit
Voltage - Supply2.7V~3.6V
Program / Erase Cycles100,000 cycles
Clock Frequency120MHz
Data Retention - TDR (Year)20 Years
Block Erase Time(tBE)-
Write Cycle Time(tWC)-
Page Programming Time (Tpp)600us
Standby Supply Current1uA
InterfaceSPI

Introduction

AI Translation

The GD25Q40C (4M-bit) Serial flash supports the standard Serial Peripheral Interface (SPI), and supports the Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (WP#), and I/O3 (HOLD#). The Dual I/O data is transferred with speed of 240Mbits/s and the Quad I/O & Quad output data is transferred with speed of 480Mbits/s.

Features

AI Translation
  • 4M-bit Serial Flash
  • 512K-byte
  • 256 bytes per programmable page
  • Standard, Dual, Quad SPI
    • Standard SPI: SCLK, CS#, SI, SO, WP#, HOLD#
    • Dual SPI: SCLK, CS#, IO0, IO1, WP#, HOLD#
    • Quad SPI: SCLK, CS#, IO0, IO1, IO2, IO3
  • High Speed Clock Frequency
    • 120MHz for fast read with 30PF load
    • Dual I/O Data transfer up to 240Mbits/s
    • Quad I/O Data transfer up to 480Mbits/s
  • Software/Hardware Write Protection
    • Write protect all/portion of memory via software
    • Enable/Disable protection with WP# Pin
    • Top/Bottom block protection
  • Minimum 100,000 Program/Erase Cycles
  • Data Retention
    • 20-year data retention typical
  • Fast Program/Erase Speed
    • Page Program time: 0.6ms typical
    • Sector Erase time: 45ms typical
    • Block Erase time: 0.15/0.25s typical
    • Chip Erase time: 2.5s typical
  • Flexible Architecture
    • Uniform Sector of 4K-byte
    • Uniform Block of 32/64K-byte
  • Low Power Consumption
    • 1μA typical deep power down current
    • 1μA typical standby current
  • Advanced Security Features
    • 128-Bit Unique ID for each device
    • -4x256-Byte Security Registers With OTP Locks
    • Serial Flash Discoverable Parameters (SFDP) Register
  • Single Power Supply Voltage
    • Full voltage range: 2.7~3.6V
  • Allows XIP (execute in place) Operation
    • Continuous Read With 8/16/32/64-byte Wrap