DIODES DMN10H170SK3Q-13
| Manufacturer | |
| MPN | DMN10H170SK3Q-13 |
| LCSC Part # | C3763804 |
| Packaging | TO-252 |
| Customer # | |
| Key Attributes | MOSFET N-CH 100V 12A TO-252 |
| Datasheet |
Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 36pF | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.167nF | |
| Gate Charge(Qg) | 9.7nC@10V |
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Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low input capacitance
- Lead-free finish; RoHS compliant
- Halogen- and antimony-free; "Green" device
- AEC-Q101 qualified for high reliability
- PPAP documentation available
Applications
AI Translation
- DC-DC Converter
- Power Management
- Analog Switch
In-Stock: 462
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Add to BOM List
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 0.7167 | $ 0.72 |
| 10+ | $ 0.5945 | $ 5.95 |
| 30+ | $ 0.5326 | $ 15.98 |
| 100+ | $ 0.4723 | $ 47.23 |
| 500+ | $ 0.4361 | $ 218.05 |
| 1,000+ | $ 0.4164 | $ 416.40 |
Standard Packaging2500/Full Reel | ||
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Products Specifications
Show similar products (0) >| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | DIODES | |
| Packaging | TO-252 | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 36pF | |
| Current - Continuous Drain(Id) | 12A | |
| Operating Temperature - | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 42W | |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF | |
| RDS(on) | 99mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.167nF | |
| Gate Charge(Qg) | 9.7nC@10V |
Report an ErrorShow similar products (0) >
Additional Information
| Type | Details |
|---|---|
| Minimum | 1 |
| Multiple | 1 |
| Standard Packaging | 2500 |
| Sales Unit | Piece |
| EDA Models | EasyEDA Model |
Introduction
AI Translation
This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.
Features
AI Translation
- Low on-resistance
- Low input capacitance
- Lead-free finish; RoHS compliant
- Halogen- and antimony-free; "Green" device
- AEC-Q101 qualified for high reliability
- PPAP documentation available
Applications
AI Translation
- DC-DC Converter
- Power Management
- Analog Switch
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



