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Nisshinbo Micro Devices Inc. R1501S120B-E2-FE product image
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Nisshinbo Micro Devices Inc. R1501S120B-E2-FE

Fabricante
Nisshinbo Micro Devices Inc.
N.º de pieza fab.
R1501S120B-E2-FE
Nº LCSC
C3749555
Emb.
HSOP-6J
Número de Cliente
Atrib. clave
12V Positive Fixed HSOP-6J Voltage Regulators - Linear, Low Drop Out (LDO) Regulators RoHS
Hoja de DatosNisshinbo Micro Devices Inc. R1501S120B-E2-FE
Agotado
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Mínimo: 1Múltiplo: 1Unidad de venta: Piece
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Cant.Prec. unit.(Solo como referencia)Importo total
1+$ 0.5531$ 0.55
200+$ 0.215$ 43.00
500+$ 0.2071$ 103.55
1,000+$ 0.2039$ 203.90
Encapsulado Estándar1000/Full Reel
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Especificaciones del Producto

Todo
TipoDescripción
CategoríaIntegrated Circuits (ICs)/Power Management (PMIC)/Voltage Regulators - Linear, Low Drop Out (LDO) Regulators
FabricanteNisshinbo Micro Devices Inc.
Emb.HSOP-6J
Output Voltage12V
Number of Outputs1
Operating Temperature-40℃~+105℃@(Ta)
Supply Current (Iq)70uA
Output ConfigurationPositive
Operating Voltage24V
Output Current1A
FeaturesEnable control;Over Current Protection;Short Circuit Protection;Thermal shutdown
Output TypeFixed
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Descripción

Traducción por IA

The R1501x series are CMOS-based positive voltage regulator (VR) ICs. The R1501xxxxB has features of high input voltage operating, 1A output current drive, and low supply current. A DMOS transistor is used for the driver, high voltage operating and low on resistance (0.6Ω at Vout = 10V) device is realized. A standard regulator circuit with a current limit circuit and a thermal shutdown circuit are built in the R1501x series. As the operating temperature range is from -40°C to 105°C and maximum input voltage is up to 24V, the R1501x series are suitable for the constant voltage source for digital home appliances and car accessories. The regulator output voltage is fixed in the R1501x. Output voltage accuracy is ±2.0% and output voltage range is from 3.0V to 12.0V with a step of 0.1V, and from 12.5V to 18.0V with a step of 0.5V. The chip enable pin realizes ultra low supply current standby mode. The DMOS (Double Diffused MOS) transistor adopted by R1501x is characterized by a double diffusion structure which comprises a low density n-type (channel) diffused layer and a high density p-type (sources) diffused layer from the edge of the gate electrode. The R1501x series possess outstanding properties of high operating voltage and low on-resistance, which have been achieved by the channel length scaled down to submicron dimensions and decreased thickness of the gate oxide film.

Características

Traducción por IA
  • Supply Current: Typ. 70μA
  • Standby Current: Typ. 0.1μA
  • Output Current: Min. 1A
  • Input Voltage Range: 3.0V to 24.0V
  • Ripple Rejection: Typ. 60dB (VSET = 5.0V)
  • Output Voltage Range: 3.0V to 12.0V (0.1V steps), 12.5V to 18.0V (0.5V steps)
  • Output Voltage Accuracy: ±2%
  • Temperature-Drift Coefficient of Output Voltage: Typ. ±100ppm/°C
  • Line Regulation: Typ. 0.05%/V
  • Packages: HSOP-6J, TO-252-5-P2
  • Operating Temperature range: -40°C to 105°C
  • Built-in Current Limit Circuit
  • Built-in Fold-Back Circuit
  • Built-in Thermal Shutdown Circuit

Aplicaciones

Traducción por IA
  • Power source for home appliances such as refrigerators, rice cookers, electric water warmers, etc.
  • Power source for car audio equipment, car navigation system, ETC system, etc.
  • Power source for notebook PCs, digital TVs, cordless phones, and private LAN system, etc.
  • Power source for office equipment machines such as copiers, printers, facsimiles, scanners, projectors, etc.