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MITSUMI MC3651LC2AAM product image
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MITSUMI MC3651LC2AAM

Manufacturer
MITSUMI
MPN
MC3651LC2AAM
LCSC Part #
C3681893
Packaging
XDFN-4-EP
Customer #
Key Attributes
Lithium Battery XDFN-4-EP Battery Management RoHS
DatasheetMITSUMI MC3651LC2AAM
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QtyUnit Price(Reference Only)Total Amount
1+$ 0.7004$ 0.70
200+$ 0.2715$ 54.30
500+$ 0.2623$ 131.15
1,000+$ 0.2577$ 257.70
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryIntegrated Circuits (ICs)/Power Management (PMIC)/Battery Management
ManufacturerMITSUMI
PackagingXDFN-4-EP
Operating Temperature-40℃~+85℃
Interface-
Quiescent Current3uA
0V Battery Charge-
Operating Voltage1.5V~5.5V
Type of BatteryLithium Battery
FeaturesOvercharge protection;Over-discharge protection;Overcurrent Protection;Short-Circuit Protection
The Chip TypeProtection IC
Balance Current-
Charge Current - Max-
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Introduction

AI Translation

MC3651 series are protection IC with integrated MOS-FET for protection of the rechargeable Lithium-ion or Lithium-polymer battery. The overcharge, overdischarge and discharging and charging overcurrent protection of the rechargeable one-cell Lithium-ion or Lithium-polymer battery can be detected.

Features

AI Translation
  • Range and accuracy of detection/release voltage: Hysteresis voltage between Overcharge detection and release voltage is selectable from 0.10V/0.15V/0.20V/0.2
  • Range of detection delay time:
    • Overcharge detection delay time 1.0s fixed
    • Overcharge release delay time Selection from 6ms, 16ms
    • Overdischarge detection delay time Selection from 100ms, 256ms
    • Overdischarge release delay time 0.5ms fixed
    • Discharging overcurrent detection delay time Selection from 8ms, 12ms, 16ms, 20ms, 48ms, 224ms
    • Charging overcurrent detection delay time Selection from 8.5ms, 16.5ms, 32.5ms
    • Short detection delay time Selection from 0.50ms, 0.75ms
    • Chager connection detection delay time Selection from 1.0ms, 8.0ms
  • 0V battery charge function: Selection from "Inhibition" or "Permission"
  • Low current consumption:
    • Normal mode Typ. 3.0μA, Max. 4.5μA
    • Stand-by mode Max. 0.025μA (In case Overdischarge latch function "Enable") Max. 0.500μA (In case Overdischarge latch function "Disable")
  • MOS-FET: Source to Source on state resistance Typ. 65.0mΩ (VDD = 3.5V)
  • Absolute maximum ratings:
    • VDD pin -0.3V to +12V
    • V- pin VDD - 24V to VDD + 0.3V
    • Drain - source voltage Max. 24V
    • Drain current Max. 1.2A
    • Total Power Dssipation Max. 0.4W
    • Storage temperature -40 to +125°C
    • Operation temperature -40 to +85°C
  • Package type: PLP - 4E 1.25 × 2.85 × 0.50max [mm]

Applications

AI Translation
  • computers
  • OA units
  • communication units
  • instrumentation units
  • machine tools
  • industrial robots
  • household electrical appliances
  • other general electronic units