MICROCHIP APT10M09LVFRG
| Manufacturer | |
| MPN | APT10M09LVFRG |
| LCSC Part # | C3293101 |
| Packaging | TO-264-3 |
| Customer # | |
| Key Attributes | 700W 100V 225A 7mΩ@10V 1 N-channel N-Channel TO-264-3 Single FETs, MOSFETs RoHS |
| Datasheet | MICROCHIP APT10M09LVFRG |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-264-3 | |
| Output Capacitance(Coss) | 9.5nF | |
| Ciss-Input Capacitance | 21.6nF | |
| Pd - Power Dissipation | 700W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 225A | |
| Reverse Transfer Capacitance (Crss) | 4.2nF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.05uC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-264-3 | |
| Output Capacitance(Coss) | 9.5nF | |
| Ciss-Input Capacitance | 21.6nF | |
| Pd - Power Dissipation | 700W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 225A | |
| Reverse Transfer Capacitance (Crss) | 4.2nF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.05uC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Power MOS V® is a new generation of high-voltage N-channel enhancement-mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density, and reduces on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Features
AI Translation
- Fast recovery body diode
- 100% avalanche tested
- Lower leakage current
- Standard SOT-227 package
- Faster switching speed
Applications
AI Translation
- DC/DC Converter
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-264-3 | |
| Output Capacitance(Coss) | 9.5nF | |
| Ciss-Input Capacitance | 21.6nF | |
| Pd - Power Dissipation | 700W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 225A | |
| Reverse Transfer Capacitance (Crss) | 4.2nF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.05uC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-264-3 | |
| Output Capacitance(Coss) | 9.5nF | |
| Ciss-Input Capacitance | 21.6nF | |
| Pd - Power Dissipation | 700W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 225A | |
| Reverse Transfer Capacitance (Crss) | 4.2nF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 1.05uC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Power MOS V® is a new generation of high-voltage N-channel enhancement-mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density, and reduces on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
Features
AI Translation
- Fast recovery body diode
- 100% avalanche tested
- Lower leakage current
- Standard SOT-227 package
- Faster switching speed
Applications
AI Translation
- DC/DC Converter
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |

