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EDA ModelsEasyEDA
MICROCHIP APT10090BLLG
| Manufacturer | |
| MPN | APT10090BLLG |
| LCSC Part # | C3293033 |
| Packaging | TO-247-3 |
| Customer # | |
| Key Attributes | 1kV 11A 4V 280W 1Ω@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Datasheet | MICROCHIP APT10090BLLG |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Output Capacitance(Coss) | 390pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 280W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.66nF | |
| Gate Charge(Qg) | 225nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Output Capacitance(Coss) | 390pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 280W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.66nF | |
| Gate Charge(Qg) | 225nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Power MOS V is a new generation of high-voltage N-channel enhancement-mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density, and reduces on-resistance. Power MOS V also achieves faster switching speeds through an optimized gate layout.
Features
AI Translation
- Faster switching speed
- 100% avalanche tested
- Lower leakage current
- Common TO-247 package
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 17.073 | $ 17.07 |
| 200+ | $ 6.6071 | $ 1321.42 |
| 500+ | $ 6.3756 | $ 3187.80 |
| 1,000+ | $ 6.2614 | $ 6261.40 |
Standard Packaging30/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Output Capacitance(Coss) | 390pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 280W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.66nF | |
| Gate Charge(Qg) | 225nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | MICROCHIP | |
| Packaging | TO-247-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 1kV | |
| Output Capacitance(Coss) | 390pF | |
| Current - Continuous Drain(Id) | 11A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 280W | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF | |
| RDS(on) | 1Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 3.66nF | |
| Gate Charge(Qg) | 225nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
Power MOS V is a new generation of high-voltage N-channel enhancement-mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density, and reduces on-resistance. Power MOS V also achieves faster switching speeds through an optimized gate layout.
Features
AI Translation
- Faster switching speed
- 100% avalanche tested
- Lower leakage current
- Common TO-247 package
C3293033 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IXTX20N150 | Littelfuse/IXYS | TO-247-3 | 3 | $ 36.0175 | ||
| APT1001RBVRG | MICROCHIP | TO-247-3 | 0 | $ 16.1395 | ||
| APT10086BVRG | MICROCHIP | TO-247-3 | 0 | $ 21.847 | ||
| APT8M100B | MICROCHIP | TO-247-3 | 0 | $ 4.5873 | ||
| MDDG1C120R040K3 | MDD(Microdiode Semiconductor) | TO-247-3L | 0 | $ 21.3103 | ||
| SCT2080KEGC11 | ROHM | TO-247N | 0 | $ 29.5373 | ||
| SCT2080KEC | ROHM | TO-247-3 | 0 | $ 67.2107 | ||
| APT1201R6BVFRG | MICROCHIP | TO-247-3 | 0 | $ 21.7498 | ||
| SC037N120J3 | DIYI Elec Tech | TO-247-3 | 0 | $ 10.1166 | ||
| STW12N120K5-VB | VBsemi Elec | TO-247 | 0 | $ 4.0066 |