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ROHM RAF040P01TCL product image
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ROHM RAF040P01TCL

Manufacturer
ROHM
MPN
RAF040P01TCL
LCSC Part #
C3291397
Packaging
TUMT-3
Customer #
Key Attributes
MOSFET P-CH 12V 4A TUMT-3
DatasheetROHM RAF040P01TCL
RoHS Compliance2 documents available
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerROHM
PackagingTUMT-3
Drain to Source Voltage12V
Operating Temperature-
Output Capacitance(Coss)410pF
Current - Continuous Drain(Id)4A
Ciss-Input Capacitance4nF
Pd - Power Dissipation800mW
Reverse Transfer Capacitance (Crss)400pF
RDS(on)22mΩ@4.5V
Number1 P-Channel
Gate Charge(Qg)37nC@4.5V
Gate Threshold Voltage (Vgs(th))1V
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Introduction

AI Translation

These P-Channel enhancement-mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary high cell density DMOS technology. This ultra-high density process is specifically designed to minimize on-resistance and provide superior switching performance. These devices are particularly suited for low-voltage applications such as notebook computer power management and other battery-powered circuits, where fast switching, low in-line power loss, and transient immunity are required.

Features

AI Translation
  • Low on-resistance
  • Low-voltage drive (1.5V drive)
  • Compact SMT package (TUMT3)

Applications

AI Translation
  • Switching applications