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EDA ModelsEasyEDA
onsemi FDB6670S
| Manufacturer | |
| MPN | FDB6670S |
| LCSC Part # | C3291194 |
| Packaging | TO-263AB |
| Customer # | |
| Key Attributes | 30V 62A 3V 62.5W 12.5mΩ@4.5V 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs RoHS |
| Datasheet | onsemi FDB6670S |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 10 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-263AB | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 62A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 222pF | |
| RDS(on) | 12.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.639nF | |
| Gate Charge(Qg) | 32nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-263AB | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 62A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 222pF | |
| RDS(on) | 12.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.639nF | |
| Gate Charge(Qg) | 32nC@10V | |
| Type | N-Channel |
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Introduction
AI Translation
This MOSFET is designed to replace a discrete MOSFET and parallel Schottky diode in synchronous DC-DC power supplies. This 30V MOSFET is optimized to maximize power conversion efficiency, offering low RDS(ON) and low gate charge. The FDP6670S incorporates Fairchild's monolithic SyncFET technology with an integrated Schottky diode. The FDP6670S/FDB6670S delivers equivalent performance as a low-side switch in synchronous rectification compared to the FDP6670A/FDB6670A with a parallel Schottky diode.
Features
AI Translation
- R DS(ON) = 12.5 mΩ (at V GS = 4.5 V)
- 31 A, 30 V, RDS(ON) = 8.5 mΩ (at VGS = 10 V)
- Integrated SyncFET Schottky body diode
- Low gate charge (typical 23 nC)
- High-performance trench technology for ultra-low RDS(ON) and fast switching
- High power and current handling capability
Applications
AI Translation
- Automotive
- High-efficiency switching for DC/DC converters
- DC motor control
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 2.7496 | $ 2.75 |
| 200+ | $ 1.0647 | $ 212.94 |
| 500+ | $ 1.0277 | $ 513.85 |
| 800+ | $ 1.0092 | $ 807.36 |
Standard Packaging800/Full Bag | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-263AB | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 62A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 222pF | |
| RDS(on) | 12.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.639nF | |
| Gate Charge(Qg) | 32nC@10V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-263AB | |
| Drain to Source Voltage | 30V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 62A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 62.5W | |
| Reverse Transfer Capacitance (Crss@Vds) | 222pF | |
| RDS(on) | 12.5mΩ@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.639nF | |
| Gate Charge(Qg) | 32nC@10V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
This MOSFET is designed to replace a discrete MOSFET and parallel Schottky diode in synchronous DC-DC power supplies. This 30V MOSFET is optimized to maximize power conversion efficiency, offering low RDS(ON) and low gate charge. The FDP6670S incorporates Fairchild's monolithic SyncFET technology with an integrated Schottky diode. The FDP6670S/FDB6670S delivers equivalent performance as a low-side switch in synchronous rectification compared to the FDP6670A/FDB6670A with a parallel Schottky diode.
Features
AI Translation
- R DS(ON) = 12.5 mΩ (at V GS = 4.5 V)
- 31 A, 30 V, RDS(ON) = 8.5 mΩ (at VGS = 10 V)
- Integrated SyncFET Schottky body diode
- Low gate charge (typical 23 nC)
- High-performance trench technology for ultra-low RDS(ON) and fast switching
- High power and current handling capability
Applications
AI Translation
- Automotive
- High-efficiency switching for DC/DC converters
- DC motor control
C3291194 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| VBL1303 | VBsemi Elec | TO-263(D2PAK) | 22 | $0.6863 $0.8074 | ||
| SUM60N10-17-E3-JSM | JSMSEMI | TO-263 | 100 | $ 1.2693 | ||
| IRLZ44NSTRLPBF-VB | VBsemi Elec | TO-263 | 177 | $0.9669 $1.0177 | ||
| IPB057N06N-VB | VBsemi Elec | TO-263(D2PAK) | 16 | $0.8260 $0.9717 | ||
| SUM40N05-19L-VB | VBsemi Elec | TO-263(D2PAK) | 10 | $0.7936 $0.9336 | ||
| IRFZ48RSP-VB | VBsemi Elec | TO-263(D2PAK) | 1 | $0.9976 $1.0501 | ||
| FDB7030BL | onsemi | TO-263AB | 0 | $ 0.4245 | ||
| HUF76139S3STK | onsemi | TO-263AB | 0 | $ 0.0544 | ||
| YJB70G10A | YANGJIE | TO-263 | 0 | $ 0.7761 | ||
| ISL9N307AS3ST | onsemi | TO-263AB | 0 | $ 0.4527 |