MICROCHIP APT8020B2FLLG
| Fabricant | |
| Réf. Fab. | APT8020B2FLLG |
| Réf. LCSC | C3290742 |
| Condit. | TO-247-3 |
| Numéro Client | |
| Caract. clés | 337W 800V 12A 5V 900mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Fiche Technique | MICROCHIP APT8020B2FLLG |
| Conformité RoHS | 2 documents disponibles |
| Pièces alternatives | 10 |
Spécifications du Produit
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | MICROCHIP | |
| Condit. | TO-247-3 | |
| Output Capacitance(Coss) | 246pF | |
| Pd - Power Dissipation | 337W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.471nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | MICROCHIP | |
| Condit. | TO-247-3 | |
| Output Capacitance(Coss) | 246pF | |
| Pd - Power Dissipation | 337W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 12A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.471nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Description
POWER MOS 8° is a high-speed, high-voltage N-channel switch-mode power MOSFET. This "FREDFET" version features an optimized drain-source (body) diode with reduced reverse recovery time (trr), soft recovery behavior, and high recovery dv/dt capability, enabling high reliability in ZVS phase-shifted bridge and other circuit topologies. Low gate charge, high transconductance, and a significantly reduced Crss/Ciss ratio deliver excellent noise immunity and low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching transitions, resulting in low EMI and reliable paralleling even at very high switching frequencies.
Caractéristiques
- Fast switching with low EMI
- Low reverse recovery time, high reliability
- Ultra-low Crss for enhanced noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS compliant
Applications
- Zero-voltage switching phase-shifted full-bridge and other full-bridge circuits
- Half-bridge circuits
- Power factor correction (PFC) and other boost converters
- Buck converters
- Single-switch and double-switch forward circuits
- Flyback circuits
| Qté | Prix unit.(Référence uniquement) | Montant total |
|---|---|---|
| 1+ | $ 38.616 | $ 38.62 |
| 200+ | $ 14.9453 | $ 2989.06 |
| 500+ | $ 14.4191 | $ 7209.55 |
| 1,000+ | $ 14.1599 | $ 14159.90 |
Boîtier Standard30/Full Tube | ||
Spécifications du Produit
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | MICROCHIP | |
| Condit. | TO-247-3 | |
| Output Capacitance(Coss) | 246pF | |
| Pd - Power Dissipation | 337W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 12A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.471nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Catégorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricant | MICROCHIP | |
| Condit. | TO-247-3 | |
| Output Capacitance(Coss) | 246pF | |
| Pd - Power Dissipation | 337W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 12A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF | |
| RDS(on) | 900mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.471nF | |
| Gate Charge(Qg) | 80nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Description
POWER MOS 8° is a high-speed, high-voltage N-channel switch-mode power MOSFET. This "FREDFET" version features an optimized drain-source (body) diode with reduced reverse recovery time (trr), soft recovery behavior, and high recovery dv/dt capability, enabling high reliability in ZVS phase-shifted bridge and other circuit topologies. Low gate charge, high transconductance, and a significantly reduced Crss/Ciss ratio deliver excellent noise immunity and low switching losses. The inherent gate resistance and capacitance of the polysilicon gate structure help control di/dt during switching transitions, resulting in low EMI and reliable paralleling even at very high switching frequencies.
Caractéristiques
- Fast switching with low EMI
- Low reverse recovery time, high reliability
- Ultra-low Crss for enhanced noise immunity
- Low gate charge
- Avalanche energy rated
- RoHS compliant
Applications
- Zero-voltage switching phase-shifted full-bridge and other full-bridge circuits
- Half-bridge circuits
- Power factor correction (PFC) and other boost converters
- Buck converters
- Single-switch and double-switch forward circuits
- Flyback circuits
C3290742 Bibliothèque EasyEDA
Conformité & Codes d'Exportation
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Détails |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Détails |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Pièces alternatives
| MPN | Fabricant | Conditionnement | Disponibilité | Prix unitaire | ||
|---|---|---|---|---|---|---|
| APT11F80B | MICROCHIP | TO-247 | 0 | $ 11.7069 | ||
| APT8043BFLLG | MICROCHIP | TO-247-3 | 0 | $ 22.1494 | ||
| APT8052BFLLG | MICROCHIP | TO-247-3 | 0 | $ 18.13 | ||
| APT8052BLLG | MICROCHIP | TO-247-3 | 0 | $ 17.0869 | ||
| APT12M80B | MICROCHIP | TO-247 | 0 | $ 11.5808 | ||
| APT8065BVFRG | MICROCHIP | TO-247-3 | 0 | $ 15.7754 | ||
| APT8056BVRG | MICROCHIP | TO-247-3 | 0 | $ 18.13 | ||
| APT8065BVRG | MICROCHIP | TO-247-3 | 0 | $ 14.9252 | ||
| APT8043BLLG | MICROCHIP | TO-247-3 | 0 | $ 20.8626 | ||
| 12N80L-T47-T | UTC | TO-247 | 0 | $ 2.1852 |