- Pinout
- Footprint
ST STW75N60DM6
| Manufacturer | |
| MPN | STW75N60DM6 |
| LCSC Part # | C3290704 |
| Packaging | TO-247 |
| Customer # | |
| Key Attributes | MOSFET N-CH 600V 72A TO-247 |
| Datasheet | ST STW75N60DM6 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 5 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 380pF | |
| Ciss-Input Capacitance | 4.85nF | |
| Pd - Power Dissipation | 446W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 72A | |
| Reverse Transfer Capacitance (Crss) | 3.5pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 117nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 380pF | |
| Ciss-Input Capacitance | 4.85nF | |
| Pd - Power Dissipation | 446W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 72A | |
| Reverse Transfer Capacitance (Crss) | 3.5pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 117nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Type | N-Channel |
Introduction
These high-voltage N-channel power MOSFETs belong to the MDmesh DM6 fast-recovery diode series. Compared to the previous-generation MDmesh fast-recovery series, the DM6 combines ultra-low recovery charge (Qrr) and recovery time (trr) with a significant improvement in RDS(ON) per unit area, delivering one of the most efficient switching characteristics on the market — ideal for demanding high-efficiency bridge topologies and zero-voltage switching (ZVS) phase-shifted converters.
Features
- Fast recovery body diode
- Lower RDS(ON) per unit area compared to previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt robustness
- Zener protection
Applications
- Switching applications
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 380pF | |
| Ciss-Input Capacitance | 4.85nF | |
| Pd - Power Dissipation | 446W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V | |
| Current - Continuous Drain(Id) | 72A | |
| Reverse Transfer Capacitance (Crss) | 3.5pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 117nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | ST | |
| Packaging | TO-247 | |
| Output Capacitance(Coss) | 380pF | |
| Ciss-Input Capacitance | 4.85nF | |
| Pd - Power Dissipation | 446W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 600V |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 72A | |
| Reverse Transfer Capacitance (Crss) | 3.5pF | |
| RDS(on) | 36mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 117nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 4.75V | |
| Type | N-Channel |
Introduction
These high-voltage N-channel power MOSFETs belong to the MDmesh DM6 fast-recovery diode series. Compared to the previous-generation MDmesh fast-recovery series, the DM6 combines ultra-low recovery charge (Qrr) and recovery time (trr) with a significant improvement in RDS(ON) per unit area, delivering one of the most efficient switching characteristics on the market — ideal for demanding high-efficiency bridge topologies and zero-voltage switching (ZVS) phase-shifted converters.
Features
- Fast recovery body diode
- Lower RDS(ON) per unit area compared to previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt robustness
- Zener protection
Applications
- Switching applications
C3290704 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |