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AOS AOTF4N60L
| Manufacturer | |
| MPN | AOTF4N60L |
| LCSC Part # | C3290511 |
| Packaging | TO-220F |
| Customer # | |
| Key Attributes | 35W 600V 4A 2.2Ω@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS |
| Datasheet | AOS AOTF4N60L |
| RoHS Compliance | 2 documents available |
| Alternative Parts | 5 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-220F | |
| Output Capacitance(Coss) | 51pF | |
| Ciss-Input Capacitance | 615pF | |
| Pd - Power Dissipation | 35W | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 4.4pF | |
| RDS(on) | 2.2Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-220F | |
| Output Capacitance(Coss) | 51pF | |
| Ciss-Input Capacitance | 615pF | |
| Pd - Power Dissipation | 35W | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 4.4pF | |
| RDS(on) | 2.2Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
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Introduction
AI Translation
AOT4N60, AOTF4N60, and AOTF4N60L are manufactured using an advanced high-voltage MOSFET process, designed to deliver high performance and reliability for common AC-DC applications. These devices feature low on-resistance RDS(on), low input capacitance Ciss, and low reverse transfer capacitance Crss, with guaranteed avalanche capability, enabling rapid drop-in use in both new and existing off-line power supply designs.
Features
AI Translation
- Avalanche rugged technology
- Robust gate oxide technology
- Lower input capacitance
- Optimized gate charge
- Extended safe operating area
- 175°C operating temperature
- Lower leakage current: 10μA (max) at VDS = 100V
- Lower RDS(ON): 0.155 Ω (typ)
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.3516 | $ 0.35 |
| 200+ | $ 0.1361 | $ 27.22 |
| 500+ | $ 0.1313 | $ 65.65 |
| 1,000+ | $ 0.129 | $ 129.00 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-220F | |
| Output Capacitance(Coss) | 51pF | |
| Ciss-Input Capacitance | 615pF | |
| Pd - Power Dissipation | 35W | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 4.4pF | |
| RDS(on) | 2.2Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | AOS | |
| Packaging | TO-220F | |
| Output Capacitance(Coss) | 51pF | |
| Ciss-Input Capacitance | 615pF | |
| Pd - Power Dissipation | 35W | |
| Configuration | - | |
| Drain to Source Voltage | 600V | |
| Operating Temperature | -55℃~+150℃ |
| Type | Description | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 4.4pF | |
| RDS(on) | 2.2Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 18nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
AOT4N60, AOTF4N60, and AOTF4N60L are manufactured using an advanced high-voltage MOSFET process, designed to deliver high performance and reliability for common AC-DC applications. These devices feature low on-resistance RDS(on), low input capacitance Ciss, and low reverse transfer capacitance Crss, with guaranteed avalanche capability, enabling rapid drop-in use in both new and existing off-line power supply designs.
Features
AI Translation
- Avalanche rugged technology
- Robust gate oxide technology
- Lower input capacitance
- Optimized gate charge
- Extended safe operating area
- 175°C operating temperature
- Lower leakage current: 10μA (max) at VDS = 100V
- Lower RDS(ON): 0.155 Ω (typ)
C3290511 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |