TI IRF9632
| Fabricante | |
| Cód. da peça | IRF9632 |
| Nº LCSC | C3290427 |
| Emb. | TO-220AB |
| Número do Cliente | |
| Atrib. princ. | 200V 5.5A 4V 1.2Ω@10V 1 P-Channel P-Channel TO-220AB Single FETs, MOSFETs |
| Folha de Dados | TI IRF9632 |
| Peças alternativas | 10 |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | TI | |
| Emb. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 5.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | P-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | TI | |
| Emb. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 5.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | P-Channel |
Descrição
IRF9630, IRF9631, IRF9632, and IRF9633 are advanced power MOSFETs designed, tested, and guaranteed to withstand specified levels of energy in the avalanche breakdown operating mode. These are P-channel enhancement-mode silicon-gate power FETs suitable for applications including switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These devices can be driven directly by ICs. The IRF series is available in the JEDEC TO-220AB plastic package.
Recursos
- -5.5A and -6.5A, -150V and -200V
- r<sub>DS(ON)</sub> = 0.8Ω and 1.2Ω
- Single-pulse avalanche energy rated
- Safe operating area limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
| Qtd. | Preço unit.(Apenas para referência) | Valor total |
|---|---|---|
| 1+ | $ 1.5677 | $ 1.57 |
| 200+ | $ 0.608 | $ 121.60 |
| 500+ | $ 0.5864 | $ 293.20 |
| 1,000+ | $ 0.5756 | $ 575.60 |
Encapsulamento Padrão50/Full Tube | ||
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | TI | |
| Emb. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 5.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | P-Channel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | TI | |
| Emb. | TO-220AB | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Output Capacitance(Coss) | 170pF | |
| Current - Continuous Drain(Id) | 5.5A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Tipo | Descrição | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 550pF | |
| Gate Charge(Qg) | 45nC@10V | |
| Type | P-Channel |
Descrição
IRF9630, IRF9631, IRF9632, and IRF9633 are advanced power MOSFETs designed, tested, and guaranteed to withstand specified levels of energy in the avalanche breakdown operating mode. These are P-channel enhancement-mode silicon-gate power FETs suitable for applications including switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These devices can be driven directly by ICs. The IRF series is available in the JEDEC TO-220AB plastic package.
Recursos
- -5.5A and -6.5A, -150V and -200V
- r<sub>DS(ON)</sub> = 0.8Ω and 1.2Ω
- Single-pulse avalanche energy rated
- Safe operating area limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalhes |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Peças alternativas
| MPN | Fabricante | Embalagem | Disponibilidade | Preço unitário | ||
|---|---|---|---|---|---|---|
| IRF9640PBF | VISHAY | TO-220AB | 20,322 | $ 1.0325 | ||
| IRF9640PBF-VB | VBsemi Elec | TO-220AB | 100 | $1.0118 $1.065 | ||
| IRF9630PBF-VB | VBsemi Elec | TO-220AB | 5 | $ 1.3848 | ||
| IRF9630PBF | VISHAY | TO-220AB | 9,615 | $ 0.5594 | ||
| VBM2251K | VBsemi Elec | TO-220AB | 0 | $ 1.3883 | ||
| IRF9640PBF-BE3 | VISHAY | TO-220AB | 0 | $ 1.2321 | ||
| SFP9640-VB | VBsemi Elec | TO-220AB | 0 | $1.3170 $1.3863 | ||
| VBM2205M | VBsemi Elec | TO-220AB | 0 | $ 1.3883 | ||
| IRFI9640GPBF | VISHAY | TO-220-3 | 0 | $ 2.6839 | ||
| NTE2373 | NTE Electronics | TO-220 | 0 | $ 15.6966 |