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EDA ModelsEasyEDA
onsemi FQP2P25
| Manufacturer | |
| MPN | FQP2P25 |
| LCSC Part # | C3290330 |
| Packaging | TO-220-3 |
| Customer # | |
| Key Attributes | P-Channel, Current: -2.3A, Voltage: -250V |
| Datasheet | onsemi FQP2P25 |
| RoHS Compliance | 3 documents available |
| Alternative Parts | 4 |
Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 52W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 250pF | |
| Gate Charge(Qg) | 8.5nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 52W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 250pF | |
| Gate Charge(Qg) | 8.5nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These P-Channel enhancement mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in both avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.
Features
AI Translation
- 2.3A, -250V, R DS(on) = 4.0Ω at V GS = -10V
- Low gate charge (typical 6.5nC)
- Low C rss (typical 6.5pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
AI Translation
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management for portable and battery-powered products
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| Qty | Unit Price(Reference Only) | Total Amount |
|---|---|---|
| 1+ | $ 0.265 | $ 0.27 |
| 200+ | $ 0.1026 | $ 20.52 |
| 500+ | $ 0.099 | $ 49.50 |
| 1,000+ | $ 0.0972 | $ 97.20 |
Standard Packaging50/Full Tube | ||
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Products Specifications
All
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Pd - Power Dissipation | 52W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 250pF | |
| Gate Charge(Qg) | 8.5nC@10V | |
| Type | P-Channel |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | onsemi | |
| Packaging | TO-220-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 55pF | |
| Current - Continuous Drain(Id) | 2.3A | |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Type | Description | |
|---|---|---|
| Pd - Power Dissipation | 52W | |
| Reverse Transfer Capacitance (Crss@Vds) | 8.5pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 250pF | |
| Gate Charge(Qg) | 8.5nC@10V | |
| Type | P-Channel |
Help & FeedbackShow similar products (0) >
Introduction
AI Translation
These P-Channel enhancement mode power MOSFETs are manufactured using Fairchild Semiconductor's proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in both avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters.
Features
AI Translation
- 2.3A, -250V, R DS(on) = 4.0Ω at V GS = -10V
- Low gate charge (typical 6.5nC)
- Low C rss (typical 6.5pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Applications
AI Translation
- Switching regulators
- Switching converters
- Motor drivers
- Relay drivers
- Low-voltage bus switches
- Power management for portable and battery-powered products
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| IXTP10P50P | Littelfuse/IXYS | TO-220-3 | 316 | $ 7.2469 | ||
| NTE2381 | NTE Electronics | TO-220 | 0 | $ 24.9602 | ||
| VBM2251K | VBsemi Elec | TO-220AB | 0 | $ 1.3883 | ||
| SFP9644 | onsemi | TO-220-3 | 0 | $ 0.7839 |