TI IRFF433
| Hersteller | |
| Herst.-Teilenr. | IRFF433 |
| LCSC-Nr. | C3290190 |
| Verp. | TO-205AF(TO-39) |
| Kundennummer | |
| Hauptmerkm. | N-Channel, Current: 2.25A, Voltage: 450V |
| Datenblatt |  TI IRFF433 |
| Alternative Teile | 1 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | TO-205AF(TO-39) | |
| Drain to Source Voltage | 450V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 100pF | |
| Current - Continuous Drain(Id) | 2.25A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 600pF | |
| Gate Charge(Qg) | 30nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | TO-205AF(TO-39) | |
| Drain to Source Voltage | 450V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 100pF | |
| Current - Continuous Drain(Id) | 2.25A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 600pF | |
| Gate Charge(Qg) | 30nC@10V | |
| Type | N-Channel |
Beschreibung
These are N-channel enhancement-mode silicon-gate power MOSFETs. They are advanced power MOSFETs designed, tested, and guaranteed to withstand specific energy levels in the avalanche breakdown operating mode. All of these power MOSFETs are suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These types can be driven directly by ICs.
Merkmale
- 2.25A and 2.75A, 450V and 500V
- rDS(ON) = 1.5Ω and 2.0Ω
- Single-pulse avalanche energy rated
- Safe operating area limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
Anwendungen
- Switching applications
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.8502 | $ 0.85 |
| 200+ | $ 0.3302 | $ 66.04 |
| 500+ | $ 0.3179 | $ 158.95 |
| 1,000+ | $ 0.3117 | $ 311.70 |
Standardgehäuse1/Full Bag | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | TO-205AF(TO-39) | |
| Drain to Source Voltage | 450V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 100pF | |
| Current - Continuous Drain(Id) | 2.25A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 600pF | |
| Gate Charge(Qg) | 30nC@10V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | TI | |
| Verp. | TO-205AF(TO-39) | |
| Drain to Source Voltage | 450V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 100pF | |
| Current - Continuous Drain(Id) | 2.25A | |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 25W | |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF | |
| RDS(on) | 2Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 600pF | |
| Gate Charge(Qg) | 30nC@10V | |
| Type | N-Channel |
Beschreibung
These are N-channel enhancement-mode silicon-gate power MOSFETs. They are advanced power MOSFETs designed, tested, and guaranteed to withstand specific energy levels in the avalanche breakdown operating mode. All of these power MOSFETs are suitable for applications such as switching regulators, switching converters, motor drivers, relay drivers, and high-power bipolar switching transistor drivers requiring high speed and low gate drive power. These types can be driven directly by ICs.
Merkmale
- 2.25A and 2.75A, 450V and 500V
- rDS(ON) = 1.5Ω and 2.0Ω
- Single-pulse avalanche energy rated
- Safe operating area limited by power dissipation
- Nanosecond switching speed
- Linear transfer characteristics
- High input impedance
Anwendungen
- Switching applications
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Teile
| MPN | Hersteller | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|
| IRFF332 | Infineon | TO-205AF(TO-39) | 0 | $ 0.6188 |