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ST PD54008-E

Manufacturer
ST
MPN
PD54008-E
LCSC Part #
C3289542
Packaging
PowerSO-10
Customer #
Key Attributes
MOSFET N-CH 25V 5A PowerSO-10
DatasheetST PD54008-E
RoHS Compliance2 documents available
Alternative Parts4
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement

Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/RF FETs, MOSFETs
ManufacturerST
PackagingPowerSO-10
Ciss-Input Capacitance91pF
Operating Temperature-
Pd - Power Dissipation73W
Reverse Transfer Capacitance (Crss)8.5pF
Output Capacitance(Coss)68pF
Drain to Source Voltage25V
Current - Continuous Drain(Id)5A
RDS(on)-
Configuration-
TypeN-Channel
Number1 N-channel
Gate Charge(Qg)-
Vgs±20V
Gate Threshold Voltage (Vgs(th))5V
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Introduction

AI Translation

The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. Device’s superior linearity performance makes it an ideal solution for portable radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

Features

AI Translation
  • Excellent thermal stability
  • Common source configuration
  • P₀ₜ = 8 W with 11.5dB gain <500 MHz/7.5 V
  • New RF plastic package

Applications

AI Translation
  • commercial and industrial applications
  • portable radio