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VISHAY SISHA10DN-T1-GE3 product image
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VISHAY SISHA10DN-T1-GE3

Manufacturer
MPN
SISHA10DN-T1-GE3
LCSC Part #
C3289437
Packaging
PowerPAK1212-8SH
Customer #
Key Attributes
MOSFET N-CH 30V 30A PowerPAK1212-8SH
DatasheetVISHAY SISHA10DN-T1-GE3
RoHS Compliance2 documents available
Alternative Parts10
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5394$ 0.54
10+$ 0.5271$ 5.27
30+$ 0.5195$ 15.59
100+$ 0.5118$ 51.18
Standard Packaging1000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerVISHAY
PackagingPowerPAK1212-8SH
Drain to Source Voltage30V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)730pF
Current - Continuous Drain(Id)30A
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation39W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)3.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.425nF
Gate Charge(Qg)23.1nC@4.5V
TypeN-Channel

Introduction

AI Translation

This MOSFET is designed to meet the stringent requirements of automotive applications. It complies with AEC-Q101 and supports PPAP, making it ideal for: motor control, DC-DC converters, load switching

Features

AI Translation
  • TrenchFET Gen IV power MOSFET
  • 100 % Rg and UIS tested

Applications

AI Translation
  • High power density DC/DC
  • Synchronous rectification
  • VRMs and embedded DC/DC

Alternative Parts

MPNManufacturerPackagingAvailabilityUnit Price
CMSC044N03CmosDFN-8(3.3x3.3)125$0.2022 $0.2128
NVTFS4C05NWFTAGonsemiWDFN-8(3.3x3.3)2$ 1.2881
CSD17578Q3ATIVSONP-8(3.3x3.3)5,002$ 0.4278
WNM3057-8/TRWILLSEMIPDFN3333-8L2,498$ 0.5474
CMSC040N04LCmosDFN-8(3.3x3.3)180$0.2240 $0.2357
PTQ3006HT(Shenzhen Jinyu Semicon)PDFN-8(3.3x3.3)4,965$0.1444 $0.1604
CMSC055N06CmosDFN-8(3.3x3.3)195$0.3772 $0.397
SISA12BDN-T1-GE3VISHAYPowerPAK1212-80$ 0.4746
FH1704GS6XIN FEI HONGPDFN-8L(3.3x3.3)0$ 0.3018
JMTQ040N03AJiangsu JieJie MicroelectronicsPDFN3.3x3.3-8L0$ 0.2652