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Infineon IAUZ40N06S5N050ATMA1
| Manufacturer | |
| MPN | IAUZ40N06S5N050ATMA1 |
| LCSC Part # | C3289320 |
| Packaging | TSDSON-8 |
| Customer # | |
| Key Attributes | MOSFET N-CH 60V 40A TSDSON-8 |
| Datasheet | Infineon IAUZ40N06S5N050ATMA1 |
| RoHS Compliance | 1 documents available |
| Alternative Parts | 9 |
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TSDSON-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 485pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 3.4V | |
| Pd - Power Dissipation | 71W | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.2nF | |
| Gate Charge(Qg) | 30.5nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TSDSON-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 485pF | |
| Current - Continuous Drain(Id) | 40A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.4V | |
| Pd - Power Dissipation | 71W | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.2nF | |
| Gate Charge(Qg) | 30.5nC@10V |
Introduction
The latest 650 V CoolMOS CFD7 extends the CFD7 series voltage range and serves as the next-generation replacement for the 650 V CoolMOS CFD2. With improved switching performance and excellent thermal characteristics, the 650 V CoolMOS CFD7 achieves maximum efficiency in resonant switching topologies such as LLC and phase-shifted full-bridge (ZVS). As part of Infineon's fast body diode portfolio, this new product family combines all the advantages of fast switching technology with superior hard-commutation robustness. CoolMOS CFD7 technology meets the highest standards of efficiency and reliability while supporting high power density solutions.
Features
- OptiMOS™ power MOSFET for automotive applications
Applications
- Soft-switching topologies
- Phase-shifted full bridge (ZVS), LLC applications - Servers
- Telecom
- EV charging
- Solar
| Qty | Unit Price | Total Amount |
|---|---|---|
| 1+ | $ 1.2673 | $ 1.27 |
| 10+ | $ 1.0723 | $ 10.72 |
| 30+ | $ 0.9651 | $ 28.95 |
| 100+ | $ 0.8432 | $ 84.32 |
| 500+ | $ 0.788 | $ 394.00 |
| 1,000+ | $ 0.7636 | $ 763.60 |
Standard Packaging5000/Full Reel | ||
Products Specifications
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TSDSON-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 485pF | |
| Current - Continuous Drain(Id) | 40A | |
| Gate Threshold Voltage (Vgs(th)) | 3.4V | |
| Pd - Power Dissipation | 71W | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.2nF | |
| Gate Charge(Qg) | 30.5nC@10V |
| Type | Description | |
|---|---|---|
| Category | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Manufacturer | Infineon | |
| Packaging | TSDSON-8 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Output Capacitance(Coss) | 485pF | |
| Current - Continuous Drain(Id) | 40A |
| Type | Description | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.4V | |
| Pd - Power Dissipation | 71W | |
| Reverse Transfer Capacitance (Crss@Vds) | 26pF | |
| RDS(on) | 5mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 2.2nF | |
| Gate Charge(Qg) | 30.5nC@10V |
Introduction
The latest 650 V CoolMOS CFD7 extends the CFD7 series voltage range and serves as the next-generation replacement for the 650 V CoolMOS CFD2. With improved switching performance and excellent thermal characteristics, the 650 V CoolMOS CFD7 achieves maximum efficiency in resonant switching topologies such as LLC and phase-shifted full-bridge (ZVS). As part of Infineon's fast body diode portfolio, this new product family combines all the advantages of fast switching technology with superior hard-commutation robustness. CoolMOS CFD7 technology meets the highest standards of efficiency and reliability while supporting high power density solutions.
Features
- OptiMOS™ power MOSFET for automotive applications
Applications
- Soft-switching topologies
- Phase-shifted full bridge (ZVS), LLC applications - Servers
- Telecom
- EV charging
- Solar
C3289320 EasyEDA Library
Compliance & Export Codes
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Type | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Type | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternative Parts
| MPN | Manufacturer | Packaging | Availability | Unit Price | ||
|---|---|---|---|---|---|---|
| BSZ075N08NS5 | Infineon | TSDSON-8FL | 7,556 | $ 0.9997 | ||
| BSZ042N06NSATMA1 | Infineon | TSDSON-8 | 1 | $ 1.0414 | ||
| BSZ123N08NS3G | Infineon | TSDSON-8FL | 4,851 | $ 1.8552 | ||
| ISC060N10NM6ATMA1 | Infineon | TDSON-8FL | 159 | $ 2.5686 | ||
| IAUC70N08S5N074 | Infineon | TDSON-8 | 66 | $ 1.5126 | ||
| IAUC64N08S5L075ATMA1 | Infineon | TDSON-8-33 | 47 | $ 0.7195 | ||
| ISZ0702NLSATMA1 | Infineon | TSDSON-8 | 12 | $ 1.6604 | ||
| IAUZ40N08S5N100ATMA1 | Infineon | TDSON-8 | 12 | $ 2.463 | ||
| IAUZ40N06S5L050ATMA1 | Infineon | TSDSON-8 | 0 | $ 1.0658 |