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Taiwan Semiconductor TSM060N03PQ33 RGG product image
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Taiwan Semiconductor TSM060N03PQ33 RGG

Manufacturer
Taiwan SemiconductorAsian Brands
MPN
TSM060N03PQ33 RGG
LCSC Part #
C3288715
Packaging
PDFN-8(3x3)
Customer #
Key Attributes
30V 62A 2.5V 40W 1 N-channel N-Channel PDFN-8(3x3) Single FETs, MOSFETs RoHS
DatasheetTaiwan Semiconductor TSM060N03PQ33 RGG
RoHS Compliance2 documents available
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1+$ 0.2092$ 0.21
200+$ 0.081$ 16.20
500+$ 0.0782$ 39.10
1,000+$ 0.0768$ 76.80
Standard Packaging5000/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerTaiwan Semiconductor
PackagingPDFN-8(3x3)
Drain to Source Voltage30V
Operating Temperature-55℃~+150℃
Current - Continuous Drain(Id)62A
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation40W
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)1.342nF
Gate Charge(Qg)12.9nC
TypeN-Channel
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Introduction

AI Translation

These 24 W symmetric Doherty RF power LDMOS transistors are designed for cellular base station applications requiring extremely wide instantaneous bandwidth capability, covering the 1880 to 2025 MHz frequency range.

Features

AI Translation
  • Low drain-source on-resistance R<sub>DS(ON)</sub> for minimized conduction losses
  • Low gate charge for fast power switching
  • 100% tested for single-pulse avalanche energy UIS and gate resistance Rg
  • Compliant with EU RoHS Directive 2011/65/EU and WEEE Directive 2002/96/EC
  • Halogen-free per IEC 61249-2-21

Applications

AI Translation
  • DC-DC Converter - Battery Power Management - OR-ing FET/Load Switch